RF Peak Detector Latch for Instant Overvoltage Protection

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Solution Overview

Problem

High voltage RF switching circuitry poses a risk of damaging low voltage integrated circuits due to spurious high voltage signals, necessitating effective overvoltage protection in communication systems.

Innovation Solution

A fast RF peak-voltage detector combined with a digital-mode RF attenuator, utilizing a modified current-mode-logic (CML) latch and digital-to-analog converter (DAC) to detect and respond to overvoltage thresholds, enabling rapid and precise protection of sensitive components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional overvoltage protection methods are used, then low voltage ICs can be protected from high voltage RF signals, but the response time is too slow to prevent permanent damage

Engineering Contradiction:
Improveprotection effectivenessVSAvoidresponse time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent replaces conventional slow-responding protection mechanisms with a field-effect transistor (FET) based electronic protection circuit. The FET acts as a rapidly controllable switch that can transition from high-impedance to low-impedance state in nanoseconds, substituting mechanical or conventional electronic protection methods with a solid-state device that responds instantaneously to overvoltage conditions.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent dynamically changes the impedance parameter of the FET switch based on the detected voltage level. When normal voltage is detected, the FET maintains high impedance to allow signal passage. When overvoltage is detected, the FET rapidly transitions to low impedance state, creating a discharge path that shunts the harmful voltage away from protected circuits within nanoseconds.

Inventive Principle:
Principle #35Parameter changes

2Loss of time

If the protection circuit is made more sensitive to detect overvoltage faster, then response time improves, but false triggering from normal signal variations increases

Engineering Contradiction:
Improvedetection timeVSAvoidfalse triggering
Core Design Contradiction:
Loss of timeVSReliability

Solution Approach 1:

The patent employs a feedback mechanism where the voltage detector continuously monitors the voltage level and provides feedback control to the FET switch. The detector compares the instantaneous voltage against a predetermined threshold and adjusts the FET gate voltage accordingly, creating a closed-loop system that responds only when actual overvoltage conditions exist rather than normal signal variations.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The protection circuit utilizes dynamic impedance switching characteristics of the FET device. The circuit transitions between high-impedance (normal operation) and low-impedance (protection mode) states based on real-time voltage conditions. This dynamic behavior allows the circuit to distinguish between transient normal variations and genuine overvoltage threats, responding only when necessary.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS11683056B2Instant RF overvoltage protection element
Publication Date: 2023.06.20 INFINEON TECHNOLOGIES AG
  • US11683056B2 patent drawing
  • US11683056B2 patent drawing
  • US11683056B2 patent drawing

AI summary

A peak detector includes an asymmetrical latch having a first input and a second input; and a CMOS converter having a first input coupled to a first output of the asymmetrical latch, a second input coupled to a second output of the asymmetrical latch, and an output.