RF Plasma Circuit Tuning for High-Density Substrate Processing
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Solution Overview
Problem
Existing substrate treating apparatuses face challenges in efficiently adjusting and generating high-density plasma, leading to increased equipment costs and reduced power efficiency due to the need for higher output voltage power supplies.
Innovation Solution
The apparatus incorporates a plasma control member with an inductive element, such as a variable inductor, on a branched conducting wire to adjust the resistance and inductance, allowing for effective control of plasma density and generation efficiency without replacing the power supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If higher output voltage power supplies are used to generate high-density plasma, then plasma density is improved, but equipment cost and power consumption increase
Solution Approach 1:
The invention changes the electrical parameters (resistance and inductance) of the power supply system by adding a plasma control member with variable inductor. This allows the system to generate high-density plasma by adjusting circuit parameters rather than simply increasing power supply output voltage, thereby reducing power consumption while maintaining plasma density
Solution Approach 2:
The plasma control member acts as an intermediary component between the power supply and the plasma generation process. By controlling the resistance and inductance in the power supply circuit, this intermediary enables efficient plasma generation without requiring high-output-voltage power supplies, thus reducing both equipment cost and power consumption
2Quantity of substance
If higher output voltage power supplies are used to generate high-density plasma, then plasma density is improved, but equipment cost increases
Solution Approach 1:
Instead of upgrading to expensive high-output-voltage power supplies, the invention achieves high-density plasma by changing the electrical parameters (resistance and inductance) of the existing power supply circuit through the plasma control member, providing a cost-effective solution
Solution Approach 2:
The invention uses a relatively simple and inexpensive plasma control member with variable inductor to achieve the desired plasma density, replacing the need for costly high-output-voltage power supplies
3Device complexity
If conventional power supply systems are used, then equipment simplicity is maintained, but plasma generation efficiency decreases
Solution Approach 1:
The plasma control member serves as an intermediary that enhances plasma generation efficiency by optimizing the electrical parameters of the power supply circuit, allowing conventional power supplies to operate more efficiently without requiring complex system overhauls
Solution Approach 2:
The variable inductor in the plasma control member provides dynamic adjustment capability, allowing the system to adapt electrical parameters in real-time to optimize plasma generation efficiency while maintaining equipment simplicity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances plasma generation efficiency and power efficiency by increasing voltage applied to the chamber, shortening processing time, and maintaining high-density plasma generation across varying process conditions.
Implementation Method 1
a plasma control member located on a branched conducting wire branching from a conducting wire, through which the RF power supply is connected to the susceptor, and grounded
Implementation Method 2
an RF power supply providing power for plasma generation and connected to the susceptor
Implementation Method 3
plasma refers to an ionized gas state composed of ions, electrons, radicals or the like, and the plasma is generated by a strong electric field or a high-frequency electromagnetic (RF) field
Data Source
AI summary
The present invention relates to a substrate treating apparatus. According to one embodiment of the present invention, a substrate treating apparatus comprises: a chamber; a susceptor located at an inner side of the chamber to support a substrate subject to a process; an electrode plate having a pre-set area and located at an upper area inside the chamber; an RF power supply providing power for plasma generation and connected to the susceptor; and a plasma control member located on a branched conducting wire branching from a conducting wire, through which the RF power supply is connected to the susceptor, and grounded.