RF PVD Aluminum Oxide Etch Stop Layer Formation
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Solution Overview
Problem
The semiconductor industry faces challenges in forming reliable semiconductor devices at smaller sizes due to increased complexity and difficulty in fabrication processes, particularly in achieving sufficient etch stop layer quality and selectivity, which affects the performance and reliability of integrated circuit devices.
Innovation Solution
A physical vapor deposition (PVD) process involving the application of radio frequency (RF) power is used to form an etch stop layer made of aluminum oxide, which improves the quality and reliability by maintaining a high etching selectivity and reducing the risk of damage from oxygen plasma, thereby enhancing the semiconductor device structure's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional PVD or ALD processes are used to form etch stop layer, then manufacturing process is simpler, but etching selectivity and layer quality are insufficient
Solution Approach 1:
The patent applies RF power during the PVD process to fundamentally change the deposition parameters, transforming a conventional thermal process into a plasma-enhanced process. This parameter change enables the formation of aluminum oxide etch stop layer with superior quality and etching selectivity compared to conventional PVD or ALD processes, while maintaining process simplicity.
Solution Approach 2:
The patent replaces the conventional thermal deposition mechanism with a plasma-based deposition mechanism by applying RF power. This substitution enables better control over the etch stop layer properties and achieves higher etching selectivity without significantly complicating the manufacturing process.
2Productivity
If feature sizes are reduced to increase functional density, then production efficiency increases and costs decrease, but fabrication process difficulty and reliability challenges increase
Solution Approach 1:
By applying RF power during PVD, the patent changes the deposition parameters to form high-quality aluminum oxide etch stop layers with controlled density and composition. This enables reliable fabrication at smaller feature sizes by providing precise control over layer properties, thereby maintaining device reliability while supporting continued scaling for increased functional density.
3Manufacturing precision
If etch stop layer quality is improved through better deposition control, then etching selectivity increases, but process time and energy consumption increase
Solution Approach 1:
The patent replaces thermal deposition with RF-powered plasma-enhanced PVD, which enables faster deposition rates while simultaneously achieving superior layer quality and etching selectivity. The plasma activation allows for improved material utilization and reduced deposition time compared to conventional thermal processes.
Solution Approach 2:
The application of RF power introduces periodic electromagnetic field action during the deposition process, which enhances material transport and deposition efficiency. This periodic energy input improves layer quality and etching selectivity while maintaining reasonable deposition times through controlled plasma cycles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The RF PVD process results in a better-quality etch stop layer with improved etching selectivity and density, maintaining low leakage current and high breakdown voltage, ensuring the reliability and performance of semiconductor devices.
Implementation Method 1
A physical vapor deposition (PVD) process involving the application of radio frequency (RF) power is used to form an etch stop layer
Implementation Method 2
introducing a plasma-forming gas into the PVD chamber, and the plasma-forming gas contains an oxygen-containing gas. The method also includes applying a radio frequency (RF) power to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma
Data Source
AI summary
A method for forming a semiconductor device structure is provided. The method includes disposing a semiconductor substrate in a physical vapor deposition (PVD) chamber and introducing a plasma-forming gas into the PVD chamber. The plasma-forming gas is an oxygen-containing gas. The method also includes applying a radio frequency (RF) power by a power source to a metal target in the PVD chamber to excite the plasma-forming gas to generate plasma. The metal target is directly electrically coupled to the power source. The method further includes directing the plasma towards the metal target positioned in the PVD chamber such that an etch stop layer is formed over the semiconductor substrate.