RF Sputtering Apparatus with Movable Grounding Body

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Solution Overview

Problem

RF sputtering apparatuses face challenges in efficiently forming films while minimizing reverse sputtering, which increases film-forming time and reduces deposition rates.

Innovation Solution

A RF sputtering apparatus with a stage having a dented portion and a movable body connected to grounding, allowing adjustment of the distance between the substrate and the movable body to control electrostatic capacity and self-bias potential, thereby reducing reverse sputtering and optimizing film formation. The movable body can be moved to vary the self-bias potential locally, and a circuit with variable impedance is used to fine-tune the process.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If RF power is applied to the target to sputter it, then film formation occurs on the substrate, but self-bias potential is applied to the substrate causing reverse sputtering which lowers film-forming rate

Engineering Contradiction:
Improvefilm-forming rateVSAvoidreverse sputtering
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

A movable body is introduced as an intermediary component between the substrate and the plasma environment. This movable body, when positioned close to the substrate, acts as a shield that modifies the plasma distribution and reduces the self-bias potential applied to the substrate, thereby suppressing reverse sputtering while allowing film formation to proceed efficiently

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The invention changes the physical parameter of electrostatic capacity by adjusting the distance between the movable body and the substrate. When the movable body is moved closer to the substrate, the electrostatic capacity increases, which directly reduces the self-bias potential and suppresses reverse sputtering, thus improving film-forming rate

Inventive Principle:
Principle #35Parameter changes

2Productivity

If the movable body is moved closer to the substrate, then electrostatic capacity increases and self-bias potential decreases, but device complexity increases

Engineering Contradiction:
Improvefilm-forming efficiencyVSAvoidstage structure
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The movable body is designed to be dynamically adjustable in position relative to the substrate. This dynamic capability allows the system to optimize the distance between the movable body and substrate for different processing conditions, enabling control over electrostatic capacity and self-bias potential while maintaining a relatively simple overall structure through straightforward mechanical movement

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively suppresses reverse sputtering, allowing for efficient film formation with improved in-plane film thickness distribution and accuracy, as demonstrated by experiments showing reduced film-forming time and uniformity.

Implementation Method 1

the electrostatic capacity between the substrate and the movable body increases

Methodology Applied
Scientific EffectElectrostatic capacity: Capacitance

Implementation Method 2

RF power is then applied to a target to thereby sputter the target, and the sputtered particles generated by the sputtering

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 3

RF power is then applied to a target to thereby sputter the target

Methodology Applied
Scientific EffectSputtering: Sputtering

Implementation Method 4

the ions and the like in the plasma of the rare gas are attracted toward the substrate and what has been deposited on the substrate will get sputtered

Methodology Applied
Scientific EffectIon attraction: Ion Repulsion/Attraction

Data Source

PatentUS9960018B2RF sputtering apparatus and sputtering method
Publication Date: 2018.05.01 ULVAC INC
  • US9960018B2 patent drawing
  • US9960018B2 patent drawing
  • US9960018B2 patent drawing

AI summary

Provided is a RF sputtering apparatus in which film forming can efficiently be made by suppressing an amount of reverse sputtering at a substrate. The RF sputtering apparatus SM, according to this invention, in which RF power is applied in vacuum to a target to thereby perform film forming processing on one surface (Wa) of the substrate (W) is provided with a stage for holding the substrate in a state in which one surface thereof is left open in an electrically insulated state. The stage has a dented portion on such a holding surface as is adapted to hold thereon the substrate. A movable body, which is movable toward, and away from, the substrate, and is connected to grounding is disposed in a space defined by such an opposite surface of the substrate as is opposite to said one surface and an outline of the dented portion.