Planar RF Electrode Susceptor for Uniform Wafer Plasma
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Solution Overview
Problem
Existing susceptors face challenges in achieving uniform plasma control and deposition uniformity due to limitations in RF electrode configurations, particularly in pocket-type designs, leading to issues like plasma density variations and wafer edge lifting.
Innovation Solution
A susceptor design with inner and outer RF electrodes buried in a dielectric plate, where the height difference and dielectric layer thicknesses are carefully controlled to ensure uniform plasma distribution, and a multilayer RF electrode structure is employed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the outer RF electrode is positioned below the inner RF electrode in a multilayer susceptor, then interference between terminals is removed and potential uniformity is improved, but configurations and designs of the RF electrodes are limited
Solution Approach 1:
The patent transitions from a vertical stacking arrangement (one dimension) to a horizontal planar arrangement (another dimension) by positioning both RF electrodes on the same plane. This dimensional change eliminates the need for vertical layering, thereby removing terminal interference issues while simultaneously enabling greater design flexibility and configurational freedom for both electrodes.
2Ease of manufacture
If different upper dielectric thicknesses are used for inner and outer RF electrodes, then structural flexibility is improved, but plasma density uniformity deteriorates
Solution Approach 1:
The patent applies local quality by positioning both RF electrodes on the same plane with identical upper dielectric thickness, creating uniform local conditions for plasma generation. This ensures that both electrodes experience the same dielectric environment, thereby achieving uniform plasma density across the entire susceptor surface while maintaining structural flexibility through electrode pattern design rather than thickness variation.
3Reliability
If a high loading surface design with steps is used, then plasma control is improved, but device complexity increases due to additional parts
Solution Approach 1:
The patent extracts and eliminates the unnecessary stepped structure and additional fastening parts from the design. By positioning both RF electrodes on the same plane, the invention achieves effective plasma control without requiring complex high-loading-surface designs with steps, thereby simplifying the overall device structure while maintaining plasma control reliability.
4Reliability
If multilayer RF electrode structure is used, then plasma distribution is improved, but manufacturing complexity increases
Solution Approach 1:
The patent resolves the manufacturing complexity issue by transitioning from a vertical multilayer structure to a horizontal planar structure where both RF electrodes are positioned on the same plane. This dimensional change maintains the ability to achieve uniform plasma distribution through proper electrode spacing and positioning while significantly simplifying the manufacturing process by eliminating the need for precise vertical layering and alignment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves uniform plasma control and improves deposition uniformity by preventing wafer edge lifting, ensuring consistent film formation across the wafer surface.
Implementation Method 1
uniform plasma treatment over an entire surface of a wafer
Implementation Method 2
RF electrode... for power supply... plasma density
Implementation Method 3
resistance heating element... to function as a heater
Implementation Method 4
dielectric plate having an upper surface on which a wafer is loaded... inner RF electrode and an outer RF electrode that are buried in the dielectric plate
Data Source
AI summary
Disclosed are a susceptor for enabling uniform plasma treatment over the entire surface of a wafer, and a manufacturing method therefor. Provided is the susceptor comprising: a dielectric plate having an upper surface on which a wafer is loaded, and a lower surface facing same; and an inner RF electrode and an outer RF electrode that are buried in the dielectric plate, wherein, with respect to the lower surface, the height of a first plane in which the inner RF electrode is buried is less than the height of a second plane in which the outer RF electrode is buried.