RF Switch Chain Biasing for Uniform Voltage and Lower Harmonics

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Solution Overview

Problem

Existing radio frequency switch circuits face issues with voltage nonuniformity and harmonic deterioration due to high voltage swings, particularly in multi-standard communication systems, which affect antenna performance and efficiency.

Innovation Solution

A radio frequency switch circuit design that includes a switch chain with MOS transistors connected to bias circuits through T-shaped resistance networks and capacitors, optimizing voltage distribution and reducing harmonics by adjusting parasitic capacitance and transistor sizes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If the voltage withstood by each switch unit is increased to handle higher voltage swings, then the voltage handling capability of the switch circuit is improved, but the harmonics generated by the switch units deteriorate

Engineering Contradiction:
Improvevoltage withstanding abilityVSAvoidharmonics
Core Design Contradiction:
StrengthVSObject-generated harmful factors

Solution Approach 1:

The switch circuit is divided into multiple switch units connected in series, where each unit withstands a portion of the total voltage swing. This segmentation allows the circuit to handle higher voltages while keeping the voltage stress on each individual unit manageable, thereby reducing harmonic generation.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different bias voltages are applied to different switch units based on their local voltage swing requirements. The bias circuit adjusts the operating point of each switch unit individually, optimizing performance for its specific voltage conditions and minimizing harmonic distortion.

Inventive Principle:
Principle #3Local quality

2Strength

If the quantity of switch units is increased to withstand higher voltages, then the voltage handling capability is improved, but the device complexity increases

Engineering Contradiction:
Improvevoltage withstanding abilityVSAvoidswitch unit quantity
Core Design Contradiction:
StrengthVSDevice complexity

Solution Approach 1:

Multiple switch units are combined in a series configuration within a single integrated circuit chip, sharing common biasing and control structures. This merging approach achieves high voltage handling capability while minimizing the increase in overall device complexity through shared resources.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The bias circuit is designed to serve multiple switch units simultaneously, providing universal voltage distribution and control functions. This multi-functional bias circuit reduces the need for separate control mechanisms for each switch unit, thereby limiting complexity growth.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Strength

If the voltage swing withstood by the switch is increased, then the voltage handling capability is improved, but the harmonics rise in a cliff-like manner

Engineering Contradiction:
Improvevoltage withstanding abilityVSAvoidharmonic distortion
Core Design Contradiction:
StrengthVSObject-generated harmful factors

Solution Approach 1:

Bias voltages are pre-applied to each switch unit before the RF signal arrives, establishing optimal operating points that preemptively prepare the switches to handle upcoming voltage swings. This preliminary biasing ensures smooth operation and prevents sudden harmonic spikes when voltage swings increase.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The bias voltages applied to different switch units are dynamically adjusted based on their position in the voltage swing profile. By changing the bias parameters locally, the circuit maintains optimal operation across the entire voltage range, preventing cliff-like harmonic increases.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS12362747B2Radio frequency switch circuit, chip, and communication terminal
Publication Date: 2025.07.15 VANCHIP TIANJIN TECH
  • US12362747B2 patent drawing
  • US12362747B2 patent drawing
  • US12362747B2 patent drawing

AI summary

Disclosed are a radio frequency switch circuit, a chip, and a communication terminal. In the radio frequency switch circuit, a switch chain is formed by at least one switch unit being provided between a first port and a second port; each switch unit is connected to a first bias circuit and to a second bias circuit; further adjustments are made to the ratio of the parasitic capacitance between MOS transistors of each switch unit to a third capacitance; and adjustments are made to the size of said MOS transistors as well as to the ratio of said size to the third capacitance. In this way, voltage distribution uniformity on the switch chain may be improved, thus increasing the overall voltage withstand ability of the radio frequency switch circuit, and reducing the occurrence of harmonic events.