RF Switch Stack Charge Control for OFF-State Voltage Balance

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Solution Overview

Problem

RF switch stacks experience undesired leakage currents during the OFF state, leading to voltage distribution imbalances and reduced power handling capabilities due to body leakage current, which complicates DC voltage distribution and increases design costs.

Innovation Solution

Incorporating charge control elements in the drain-source and body resistive ladders of FET switch stacks, which provide tapping points for local charge support and redistribute DC voltages to maintain desired voltage levels, thereby reducing voltage drops and enhancing power handling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If charge control elements are added to the resistive ladders, then voltage distribution balance is improved, but device complexity increases

Engineering Contradiction:
Improvevoltage distribution balanceVSAvoiddevice complexity
Core Design Contradiction:
Stability of the object's compositionVSDevice complexity

Solution Approach 1:

Charge control elements are introduced as intermediary components between the resistive ladders and the transistor terminals. These elements actively mediate the voltage distribution by injecting or removing charge to compensate for leakage currents, thereby maintaining voltage balance without requiring fundamental changes to the switch stack architecture.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The charge control elements are configured to automatically detect and compensate for voltage imbalances caused by leakage currents. By monitoring the actual voltage distribution and dynamically adjusting charge levels, the system achieves self-regulation of voltage balance without external intervention, offsetting the added complexity through autonomous operation.

Inventive Principle:
Principle #25Self-service

2Ease of manufacture

If resistive ladders are used for biasing, then ease of manufacture is improved, but power handling capability deteriorates due to voltage drops from leakage currents

Engineering Contradiction:
Improveease of manufactureVSAvoidpower handling capability
Core Design Contradiction:
Ease of manufactureVSPower

Solution Approach 1:

The invention dynamically changes the electrical parameters (voltage levels) at critical points in the resistive ladder by introducing charge control elements. These elements adjust the effective voltage distribution in real-time to compensate for leakage-induced drops, thereby maintaining adequate voltage levels for power handling while preserving the simplicity of resistive ladder biasing.

Inventive Principle:
Principle #35Parameter changes

3Power

If the switch stack is designed to block large RF voltages, then power handling is improved, but leakage currents increase causing voltage distribution imbalances

Engineering Contradiction:
Improvepower handlingVSAvoidleakage currents
Core Design Contradiction:
PowerVSObject-generated harmful factors

Solution Approach 1:

The invention converts the harmful effect of leakage currents into a controllable parameter. By introducing charge control elements that detect and compensate for leakage-induced voltage drops, the harmful leakage currents are transformed into a manageable condition where the charge control elements use the leakage information to actively maintain voltage balance, thereby preserving power handling capability.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Data Source

PatentUS12057827B2RF switch stack with charge control elements
Publication Date: 2024.08.06 PSEMI CORP
  • US12057827B2 patent drawing
  • US12057827B2 patent drawing
  • US12057827B2 patent drawing

AI summary

Methods and devices to address the undesired DC voltage distribution across switch stacks in OFF state are disclosed. The disclosed devices include charge control elements that sample the RF signal to generate superimposed voltages at specific points of the switch stack biasing circuit. The provided voltages help reducing the drooping voltages on drain/source/body terminals of the transistors within the stack by supplying the current drawn by drain/source terminals of the stacked transistors and/or by sinking the body leakage current exiting the body terminals of such transistors. Methods and techniques teaching how to provide proper tapping points in the biasing circuit to sample the RF signal are also disclosed.