RF Switch Structure Using Integral P Diode for Lower RF Loss
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Solution Overview
Problem
Existing RF switch devices face challenges in improving on-resistance (Ron) while maintaining breakdown voltage and space efficiency, particularly when incorporating a P diode for a floating body effect, leading to increased RF loss and insertion loss.
Innovation Solution
The RF switch device integrates an integral P diode between the gate and body, utilizing a floating body effect to reduce RF loss and improve on-resistance by eliminating electrical routes to the body, thereby controlling body bias with gate bias.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a P diode is added between gate and body to improve on-resistance using floating body effect, then on-resistance improves, but device area increases reducing space efficiency
Solution Approach 1:
The P diode is merged with the RF switch structure by sharing the gate electrode and forming the P diode within the existing device footprint. The anode of the P diode is formed in the body region while the cathode connects to the gate, allowing the P diode to be integrated without requiring separate dedicated space.
Solution Approach 2:
The gate electrode serves dual functions: as the control gate for the RF switch and as the cathode connection for the P diode. This multi-functionality allows the same structure to provide both switch control and floating body effect, eliminating the need for additional separate components.
2Reliability
If gate shrinking is applied to improve on-resistance, then on-resistance improves, but breakdown voltage decreases
Solution Approach 1:
The invention changes the electrical parameters of the body region by forming a P diode that creates a floating body effect. This alters the potential distribution and electric field characteristics, allowing on-resistance to be reduced through parameter optimization rather than geometric shrinking, thereby preserving breakdown voltage.
3Loss of energy
If electrical routes to body are removed for self-body bias, then RF loss reduces, but control over body bias is lost
Solution Approach 1:
The P diode provides a feedback mechanism where the gate voltage automatically controls the body potential. When the gate is biased, the P diode conducts and adjusts the body potential accordingly, creating a self-regulating system that reduces RF loss while maintaining control through the gate signal.
Solution Approach 2:
The body bias is generated automatically through the floating body effect created by the P diode, without requiring external body bias circuits or additional control signals. The system self-regulates the body potential based on the gate voltage, eliminating the need for separate body bias control infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of an integral P diode reduces RF loss and improves on-resistance, enhancing insertion loss characteristics by minimizing RF loss and eliminating electrical routes to the body.
Implementation Method 1
utilizing a floating body effect when the RF switch is on or active
Data Source
AI summary
Provided is an RF switch device and a method of manufacturing the same and, more particularly, to an RF switch device that improves the on-resistance (Ron) of the RF switch by including an integral or integrally formed P diode. The RF switch device includes a first active region on a first substrate as a first base, a second active region on the first substrate spaced apart from the first active region as a second base, and a gate electrode on the first active region and on the second active region.