RF Switch Gate Layout for Breakdown Voltage Without FoM Penalty
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Solution Overview
Problem
RF switch devices face challenges in improving breakdown voltage characteristics while preventing the figure of merit (FoM) value from increasing, due to the trade-off relationship between these two parameters. Additionally, the accumulation of holes in the floating body region leads to a kink phenomenon, deteriorating device characteristics.
Innovation Solution
The RF switch device incorporates a gate electrode with a first electrode extending along a first direction between opposite ends of a second electrode in a second direction. This configuration reduces the path length for hole movement from the body region to the body contact, allowing smoother hole release and improving breakdown voltage characteristics. Furthermore, a pair of body contacts is used to enable hole escape in multiple directions, preventing FoM value increases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the gate length is increased to improve breakdown voltage characteristics, then the breakdown voltage increases, but the on-resistance increases resulting in an increase in the FoM value
Solution Approach 1:
The gate electrode is segmented into a first electrode and a second electrode that are spatially separated and extend in different directions. The first electrode extends along a first direction (e.g., length of gate) and the second electrode extends along a second direction (e.g., width of gate), creating a segmented structure that independently controls electrical characteristics. This segmentation allows the device to achieve high breakdown voltage through the first electrode's length while maintaining low on-resistance through the second electrode's width, thus resolving the trade-off between breakdown voltage and FoM value.
2Device complexity
If holes are released through a single body contact in a conventional T-type structure, then the device structure is simple, but the hole escape path is long and constrained resulting in deteriorated breakdown voltage characteristics
Solution Approach 1:
The electrode structure transitions from a conventional planar T-type configuration to a three-dimensional spatial arrangement where the first and second electrodes extend in different directions (e.g., orthogonal directions). This dimensional change creates multiple independent paths for hole escape from the body region to the body contact, significantly reducing the hole escape path length and improving breakdown voltage characteristics while maintaining structural simplicity.
Data Source
AI summary
Provided is an RF switch device and a manufacturing method thereof and, more particularly, an RF switch device and a manufacturing method thereof that improve breakdown voltage characteristics and prevent an increase in the figure of merit (FoM) value, which has a trade-off relationship with the breakdown voltage characteristics, by decreasing the path along which holes move in a body region to a body contact by including a first (gate) electrode extending along a first direction between opposite ends of a second (gate) electrode extending in a second (orthogonal) direction.