RF Switch Reconfiguration for Low Insertion Loss and Leakage Control
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Solution Overview
Problem
High power radio frequency (RF) switches face challenges in achieving low insertion loss while maintaining bandwidth, as stacked transistors used to prevent leakage currents and transistor breakdown increase insertion loss in low power receive modes.
Innovation Solution
Designing an RF switch with all transistors in an on state during high power mode and all transistors in an off state during low power mode, reducing the number of stacked transistors in each mode to minimize insertion loss without compromising bandwidth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If stacked transistors are used to prevent leakage currents and transistor breakdown, then reliability is improved, but insertion loss increases in low power receive mode
Solution Approach 1:
The patent applies dynamics by making the transistor stack configuration adaptive to operating conditions. The system dynamically reconfigures the number of active transistor stacks based on whether the device is in high power transmit mode or low power receive mode, allowing optimal performance for each operating condition rather than being fixed in a compromise configuration
Solution Approach 2:
The patent changes the operational parameters of the transistor stacks by controlling their on/off states based on power mode. In high power mode, more transistor stacks are activated to handle higher voltages and prevent breakdown. In low power mode, fewer transistor stacks are activated to reduce insertion loss, thus adapting parameters to match operating requirements
2Loss of energy
If channel width of transistors is increased to reduce insertion loss, then insertion loss is reduced, but bandwidth is limited
Solution Approach 1:
The patent uses dynamic reconfiguration of transistor stacks to achieve low insertion loss without permanently increasing channel width. By activating fewer transistor stacks in low power mode, the effective impedance matches are achieved with standard channel widths, thereby maintaining bandwidth while reducing insertion loss when needed
3Loss of energy
If number of stacked transistors is reduced to minimize insertion loss, then insertion loss is reduced, but power handling capability decreases
Solution Approach 1:
The system dynamically adjusts the number of active transistor stacks based on power mode. In high power transmit mode, a greater number of transistor stacks are activated to provide the necessary voltage handling capability and power management. In low power receive mode, fewer transistor stacks are activated to minimize insertion loss, thus adapting power handling to actual requirements
Data Source
AI summary
High power radio frequency (RF) switches with low leakage current and low insertion loss are provided. In one embodiment, an RF switch includes a plurality of terminals including an antenna terminal, a receive terminal, and a transmit terminal. The RF switch also includes a plurality of transistors that are controllable to set the RF switch in a first mode or a second mode, and an inductor electrically connected between the antenna terminal and the receive terminal.