RF Semiconductor Switch With Integrated Power Detection

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Solution Overview

Problem

Conventional semiconductor switches used in RF modules for microwave and millimeter bands require power level detection circuits and control circuits, leading to increased complexity and performance degradation due to signal loss when used as power resistance switches.

Innovation Solution

A semiconductor switch design that includes a first input/output terminal, a second input/output terminal, and a third input/output terminal, connected by a first and second transmission line, with a detector circuit that outputs a DC voltage corresponding to the power level of the high-frequency signal, allowing the first transistor to switch between routes and control the signal path based on the detected power level.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional semiconductor switch is used with additional detector and control circuits to manage input power levels, then the switch can protect the receiver system from high input power, but the receiver system loss increases and circuit complexity increases

Engineering Contradiction:
Improvereceiver system protectionVSAvoidreceiver system loss
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent combines the power detection function and switching control function into a single integrated semiconductor switch device. The detector circuit is integrated within the switch, eliminating the need for separate external detector and control circuits. This integration reduces the overall circuit complexity and minimizes additional losses that would occur with separate components, while still providing reliable protection against high input power to the receiver system.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If a conventional semiconductor switch is used with additional detector and control circuits to manage input power levels, then the switch can protect the receiver system from high input power, but the circuit complexity increases

Engineering Contradiction:
Improvereceiver system protectionVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the detector circuit and control logic into the semiconductor switch itself, creating an integrated device that requires no external control circuits. The switch automatically detects power levels and controls the switching action internally, significantly reducing circuit complexity compared to conventional approaches that require separate detector and control circuit components.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The semiconductor switch is designed to autonomously detect input power levels and control its own switching operation without requiring external control circuits. The detector circuit within the switch automatically generates control signals based on detected power levels, enabling the device to protect the receiver system independently without adding external complexity.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables signal switching according to input power levels while maintaining receiver system performance with a simplified configuration, reducing signal loss and circuit complexity.

Implementation Method 1

a second transmission line arranged in parallel to the first transmission line, for allowing a part of a high frequency signal passing through the first transmission line to be branched by coupling

Methodology Applied
Scientific EffectElectromagnetic coupling: Electromagnetic Induction

Implementation Method 2

a detector circuit connected to one end of the second transmission line, for outputting a DC voltage corresponding to a power level of the branched high frequency signal

Methodology Applied
Scientific EffectSignal detection and rectification: Photoelectric Effect

Data Source

PatentUS20100225376A1Semiconductor switch, semiconductor switch MMIC, changeover switch RF module, power resistance switch RF module, and transmitter and receiver module
Publication Date: 2010.09.09 MITSUBISHI ELECTRIC CORP
  • US20100225376A1 patent drawing
  • US20100225376A1 patent drawing
  • US20100225376A1 patent drawing

AI summary

A semiconductor switch for switching a signal according to input power and maintaining performance of a receiver system with a simple configuration. The semiconductor switch comprises: a first FET connected between a first input/output terminal and a second input/output terminal; a first transmission line connected between the first input/output terminal and a third input/output terminal; a second transmission line parallel to the first transmission line; and a detector circuit connected to one end of the second transmission line, for outputting a DC voltage corresponding to power level of the high frequency signal, branched by the second transmission line. The first FET is controlled and switched according to an output from the detector circuit to switch between a route from the first input/output terminal to the second input/output terminal and a route from the first input/output terminal to the third input/output terminal.