RF Voltage Divider Circuit for Switch Control Without Transistor Breakdown

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Solution Overview

Problem

Existing RF electronic products face challenges in generating a power supply voltage for drive circuits based on control signal voltages, which affects the operation of RF switchers and transmission paths.

Innovation Solution

A voltage generating device comprising transistors and a voltage dividing circuit that divides input voltages to produce output and control voltages, used in conjunction with a voltage regulating unit to generate positive and negative voltages for an RF circuit, allowing control over RF transmission paths.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a voltage dividing circuit is used to generate control voltage from power supply voltage, then the drive circuit can operate with controlled voltage levels, but the circuit complexity increases due to additional components

Engineering Contradiction:
Improveoperation stabilityVSAvoidcircuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The voltage dividing circuit is integrated within the drive circuit structure, merging the voltage control function with the existing drive circuit components. This combination allows the circuit to generate appropriate control voltages for RF switcher terminals while maintaining a compact overall structure and avoiding significant complexity increase.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The voltage dividing circuit acts as an intermediary component that transforms the power supply voltage into suitable control voltages for the RF switcher. This mediator function enables proper voltage level matching between the power supply and RF switcher control terminals, ensuring reliable operation without direct connection issues.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If higher power supply voltage is used to drive RF switcher, then the switching performance improves, but the risk of transistor breakdown increases

Engineering Contradiction:
Improveswitching performanceVSAvoidtransistor breakdown risk
Core Design Contradiction:
ProductivityVSObject-affected harmful factors

Solution Approach 1:

The drive circuit provides different voltage levels to different terminals of the RF switcher locally. The power supply voltage is applied to the drain terminal for high-performance switching, while the gate terminal receives a divided, lower control voltage. This local quality differentiation allows high switching performance while protecting the gate terminal from breakdown.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The voltage dividing circuit changes the voltage parameter from the power supply level to a lower control level suitable for the gate terminal. By transforming the voltage parameter through the dividing circuit, the system achieves both high switching performance at the drain and safe operating conditions at the gate.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS11290136B2Radio frequency device and voltage generating device thereof
Publication Date: 2022.03.29 RICHWAVE TECH CORP
  • US11290136B2 patent drawing
  • US11290136B2 patent drawing
  • US11290136B2 patent drawing

AI summary

A radio frequency device and a voltage generating device thereof are provided. The voltage generating device includes a first transistor, a second transistor, and a voltage dividing circuit. A first terminal of the first transistor receives a first voltage. A first terminal of the second transistor receives a second voltage. A first connection terminal and a second connection terminal of the voltage dividing circuit are respectively coupled to second terminals of the first transistor and the second transistor. The voltage dividing circuit generates a first divided voltage and a second divided voltage. The first divided voltage is used as an output voltage of the voltage generating device. The second divided voltage is output as a control voltage to a control terminal of the first transistor and a control terminal of the second transistor.