RFID Device Nonvolatile Ferroelectric Memory Data Retention
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Solution Overview
Problem
Conventional RFID tags lose their data processing state and value when power is interrupted, leading to delays in data processing and inability to differentiate between tags, as they require re-initialization upon power restoration, resulting in potential data changes being overlooked.
Innovation Solution
A RFID device equipped with a nonvolatile ferroelectric memory that stores data processing states and values using a memory unit with a ferroelectric capacitor, allowing for flag data to be maintained for a short period even when power is off, enabling efficient data retention and reduced layout area requirements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional RFID tags use volatile memory for data storage, then the device complexity is reduced, but the data processing state and value are lost when power is interrupted
Solution Approach 1:
The patent changes the memory technology parameter from volatile to non-volatile ferroelectric memory, which maintains data retention capability without requiring continuous power supply. This parameter change resolves the contradiction by providing reliable data retention while the ferroelectric memory structure integrates seamlessly into the existing RFID tag architecture.
2Productivity
If conventional RFID tags re-initialize upon power restoration, then the data processing state is reset, but processing delays occur and data integrity is compromised
Solution Approach 1:
The ferroelectric memory performs preliminary action by retaining the data processing state and value during power interruptions. When power is restored, the stored state is immediately available, eliminating the need for re-initialization and reducing processing delays. This preliminary retention of state information directly addresses the time loss problem.
3Reliability
If conventional RFID tags use simple memory structures, then the ease of manufacture is improved, but the ability to differentiate between tags during power interruptions is lost
Solution Approach 1:
The patent employs a cost-effective non-volatile ferroelectric memory that provides reliable tag differentiation capability. The memory structure, while more sophisticated than simple volatile memory, integrates efficiently into the RFID tag and maintains the ability to distinguish between tags during power interruptions without significantly complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The RFID device effectively maintains data processing states and values during power interruptions, reducing processing delays and ensuring data integrity by utilizing a nonvolatile ferroelectric memory with a ferroelectric capacitor, allowing for quick re-establishment of data when power is restored.
Implementation Method 1
FeRAM includes capacitors made of a ferroelectric substance having a high residual polarization, by which data retention is possible even after power is no longer provided to the FeRAM
Implementation Method 2
When a given RFID tag is exposed within a given RF field, the RFID tag receives the activating signal from the antenna of the RFID reader. An inducing voltage is generated in an antenna coil equipped in the RFID tag
Data Source
AI summary
A RFID device having an analog block, a digital block, and a memory block having a nonvolatile ferroelectric memory is presented. The analog block is configured to receive a radio frequency signal so as to output an operating command signal. The digital block is configured to generate and output an address and an operation adjusting signal in response to the operating command signal. The digital block is also configured to output a response signal to the analog block and to generate a flag data corresponding to a data processing state and value. The memory block is configured to read and write a data in a nonvolatile ferroelectric capacitor in response to the operation adjusting signal. The memory block includes a memory unit configured to store the flag data so as to output the flag data to the digital block.