Rhenium-Doped Semiconductive Layer for Organic Components
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Solution Overview
Problem
Electric organic components, such as organic light-emitting diodes, face inefficiencies and reduced service life due to poor charge carrier injection from electrodes into organic functional layers.
Innovation Solution
Incorporating a first electrically semiconductive layer doped with rhenium compounds, which reduces the voltage drop and facilitates a good ohmic contact between electrodes and organic functional layers, allowing for improved charge carrier transport and increased efficiency and service life without material restrictions for the electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional electrodes are used without doping, then the structure is simpler, but charge carrier injection efficiency is poor and service life is reduced
Solution Approach 1:
The patent introduces an electrically semiconductive layer as an intermediary between the electrode and the organic functional layer. This intermediate layer facilitates charge carrier injection by providing a transition zone with appropriate energy levels, thereby improving service life without requiring modification of the electrode material itself.
Solution Approach 2:
The patent applies doping with rhenium compounds to change the electrical parameters of the semiconductive layer. The doping process modifies the charge carrier concentration and energy level alignment, enabling efficient charge injection while maintaining structural simplicity.
2Productivity
If doping with rhenium compounds is applied, then charge carrier injection efficiency improves, but manufacturing process becomes more complex
Solution Approach 1:
The doping with rhenium compounds is performed during the deposition process itself, rather than as a separate post-processing step. This preliminary doping approach integrates the complex doping process into the existing manufacturing workflow, minimizing additional complexity.
3Use of energy by moving object
If higher efficiency is achieved through doping, then more materials and processes are required, but this increases device complexity
Solution Approach 1:
The patent applies doping locally to the electrically semiconductive layer that is in direct contact with the electrode. This localized doping approach improves efficiency at the critical charge injection interface without requiring doping of the entire device structure, thereby limiting the increase in material complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The doping of the semiconductive layer with rhenium compounds enhances the efficiency and service life of electric organic components by reducing voltage drop and improving charge carrier injection, enabling the use of various electrode materials and maintaining stability at elevated temperatures.
Implementation Method 1
The matrix material may furthermore be p-doped by the dopant. It is possible in this manner to produce a positive charge or partial charge in the energy levels which effect charge carrier transport.
Implementation Method 2
an electron passes over from the HOMO of the matrix material to the LUMO of the dopant so creating a positive charge or partial charge in the matrix material
Implementation Method 3
good ohmic contact between the first electrode and the organic functional layer may be produced thereby
Implementation Method 4
the voltage drop between the first electrode and the organic functional layer may be reduced
Data Source
AI summary
An electric organic component and a method for the production thereof is disclosed. The component includes a substrate, a first electrode, a first electrically semiconductive layer on the first electrode, an organic functional layer on the first electrically semiconductive layer and a second electrode on the organic functional layer. The first or the second electrode may be arranged on the substrate. The electrically semiconductive layer is doped with a dopant which comprises rhenium compounds.


