Ring-Shaped Semiconductor Contact Layer for Lower Contact Resistance
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving optimal contact resistance and preventing material degradation during manufacturing processes, particularly in the integration of semiconductor contact layers and electrodes, which affects the yield and performance of devices like light-emitting diodes.
Innovation Solution
The semiconductor device incorporates a ring-shaped semiconductor contact layer surrounded by a first electrode and covered by an insulating layer, with specific geometric configurations and material distributions to enhance contact area and reduce stress, thereby improving contact resistance and preventing material oxidation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional semiconductor contact layer structure is used, then the manufacturing process is simple, but the contact resistance is high and material degradation occurs
Solution Approach 1:
The contact layer is divided into a ring-shaped semiconductor contact layer with a first inner sidewall and first outer sidewall, creating a segmented structure that increases contact area while maintaining manufacturing feasibility. The ring shape separates the contact region into an inner contact area and an outer contact area, reducing overall contact resistance without requiring complex multi-layer structures.
Solution Approach 2:
The ring-shaped semiconductor contact layer is nested within the first electrode structure, with the first electrode covering the ring-shaped contact layer. This nested configuration allows the contact layer to be integrated within the electrode geometry, improving contact resistance while avoiding additional manufacturing steps.
2Reliability
If the contact layer and electrode are closely integrated, then contact resistance is reduced, but material oxidation and degradation occur during manufacturing
Solution Approach 1:
The insulating layer acts as an intermediary barrier between the ring-shaped semiconductor contact layer and the external environment. This insulating layer prevents direct exposure of the contact layer to oxidizing conditions during manufacturing while maintaining the low contact resistance achieved through the ring-shaped geometry. The insulating layer mediates between the need for close contact integration and the need to prevent material degradation.
Solution Approach 2:
The insulating layer creates a protected, inert environment around the ring-shaped semiconductor contact layer, shielding it from oxidative harm during the manufacturing process. This protective barrier allows the contact layer to maintain its low-resistance properties without undergoing material degradation from exposure to reactive conditions.
3Reliability
If the inner sidewalls are flush-aligned, then the manufacturing precision is easier to control, but the contact area is insufficient leading to high contact resistance
Solution Approach 1:
The first inner sidewall of the ring-shaped contact layer is deliberately positioned at a different height than the second inner sidewall of the insulating layer, creating an asymmetric configuration. This asymmetry increases the effective contact area between the contact layer and electrode, reducing contact resistance. The asymmetric design is implemented with controlled precision, accepting non-flush alignment as a deliberate design choice rather than a manufacturing deviation.
Solution Approach 2:
The solution moves from a two-dimensional planar contact interface to a three-dimensional ring-shaped contact structure with vertical sidewalls at different heights. This dimensional change creates additional contact area in the vertical dimension, allowing reduced contact resistance without requiring tighter lateral alignment precision between the contact layer and insulating layer.
4Reliability
If the contact area is increased to reduce contact resistance, then the device performance improves, but the device complexity increases
Solution Approach 1:
The contact layer is segmented into a ring-shaped structure with distinct inner and outer sidewalls, creating multiple contact regions (inner contact area and outer contact area) that collectively increase the total contact area. This segmented approach achieves lower contact resistance through distributed contact points rather than requiring a single large complex structure.
Solution Approach 2:
The ring-shaped semiconductor contact layer serves multiple functions simultaneously: it provides electrical contact through its inner and outer sidewalls, defines geometric boundaries for the electrode, and creates a structured interface for the insulating layer. This multi-functionality reduces the need for additional separate structures, thereby limiting the increase in device complexity while achieving increased contact area.
Data Source
AI summary
The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.