Ring-Shaped Gate Electrode for Semiconductor Device Reliability
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Solution Overview
Problem
Semiconductor devices face challenges in scaling down while maintaining high performance and reliability, particularly in mobile consumer products where device size reduction is incompatible with reliability demands.
Innovation Solution
The semiconductor device incorporates a gate electrode with a ring-shaped channel portion structure and connecting portions that connect neighboring channel portions, along with impurity doped regions separated by the channel portions to prevent punch-through phenomena and enhance reliability, and a driving transistor configuration that includes bit line contact plugs and source contact plugs for improved electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the device size is scaled down to meet mobile consumer product requirements, then the device can be used in portable applications, but reliability deteriorates due to increased susceptibility to punch-through phenomena and charge trapping
Solution Approach 1:
The gate electrode is segmented into multiple sections with connecting portions that have different work functions. This segmentation allows each section to be independently optimized for its specific function: some sections prevent punch-through phenomena while others prevent charge trapping, thereby maintaining high reliability in scaled-down devices
Solution Approach 2:
Different portions of the gate electrode are assigned different local properties through varying work functions. The first gate electrode section has a work function optimized for preventing punch-through, while the second section has a work function optimized for preventing charge trapping. This local quality differentiation resolves the reliability issues in miniaturized devices
2Ease of manufacture
If a conventional gate electrode structure is used in scaled-down devices, then manufacturing is simpler, but electrical performance deteriorates due to punch-through phenomena and charge trapping
Solution Approach 1:
The gate electrode is divided into multiple sections with connecting portions, where each section can be formed using standard manufacturing processes. The segmented structure maintains compatibility with existing fabrication techniques while improving electrical performance by preventing punch-through and charge trapping through optimized work function distribution
Solution Approach 2:
The work function parameter is varied across different sections of the gate electrode. By changing the work function parameter locally in different gate electrode sections, the device achieves superior electrical performance in scaled-down configurations without requiring fundamentally new manufacturing approaches
3Reliability
If the gate electrode is made longer to improve channel control, then reliability improves, but device area increases which conflicts with scaling requirements
Solution Approach 1:
The gate electrode structure transitions from a simple linear configuration to a multi-dimensional arrangement with connecting portions and sections at different locations. This dimensional complexity allows the gate electrode to effectively control channels in multiple directions without proportionally increasing the projected device area, thus improving channel control while maintaining scaling benefits
Data Source
AI summary
A semiconductor device includes a cell region including memory cells that have a selection element and a data storage element, and a driving circuit region including a driving transistor configured to operate the selection element. The driving transistor includes active portions defined by a device isolation pattern in a substrate and a gate electrode running across the active portion along a first direction, the gate electrode including channel portions of a ring-shaped structure. The driving transistor further includes first impurity doped regions disposed in the active portions that are surrounded by channel portions, and second impurity doped regions disposed in the active portion that are separated from the first impurity doped regions by the channel portions.