Ring-Connected Hall Effect Regions for Zero-Point Error Reduction
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Solution Overview
Problem
Vertical Hall devices suffer from significant residual zero-point errors due to asymmetry, and existing methods to improve symmetry through parallel connections are limited by contact resistances, which hinder effective sensing of magnetic fields and mechanical stress.
Innovation Solution
An electronic device comprising multiple isolated Hall effect regions connected in a ring structure with specific contact configurations, allowing for symmetrical current paths and temporary function swapping between supply and sense contacts during a spinning current scheme to enhance sensing accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If vertical Hall devices are used to sense magnetic fields, then magnetic field sensing capability is provided, but residual zero-point errors occur due to device asymmetry
Solution Approach 1:
The invention divides the sensing function into four separate vertical Hall devices arranged in a ring configuration, each contributing to the overall sensing capability while the segmentation allows for better error cancellation through the specific connection topology
Solution Approach 2:
The invention intentionally creates a symmetric connection pattern (ring configuration) to compensate for the inherent asymmetry in individual vertical Hall devices, using the symmetric arrangement to cancel out residual zero-point errors that would otherwise degrade measurement precision
2Stability of the object's composition
If four vertical Hall devices are connected in parallel to improve symmetry, then symmetry is enhanced, but contact resistances cause residual asymmetries to persist
Solution Approach 1:
The invention transitions from a simple parallel connection (two-dimensional plane) to a ring configuration that utilizes the temporal dimension through spinning current schemes, allowing the system to achieve better symmetry and error cancellation by cycling through different connection states
Solution Approach 2:
The invention implements dynamic switching of current paths through spinning current schemes, where the connection topology changes over time to alternate between different device pairs, thereby dynamically canceling out static contact resistance asymmetries that would otherwise cause persistent zero-point errors
3Reliability
If spinning current scheme is applied to cancel zero-point error, then offset reduction is achieved, but residual errors of about 1 mT remain due to asymmetry
Solution Approach 1:
The invention merges the output signals from four separate vertical Hall devices through a specific ring connection topology, combining their individual measurements in a way that enhances the cancellation of zero-point errors while maintaining sensitivity to the actual magnetic field being measured
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ring-connected Hall effect regions reduce residual offset errors and improve the accuracy of sensing magnetic fields and mechanical stress by ensuring symmetrical current distribution and minimizing zero-point errors.
Implementation Method 1
vertical Hall devices may be used... to sense or measure the strength and direction of a magnetic field parallel to the surface
Implementation Method 2
Another physical quantity that may be sensed or measured is mechanical stress within an object such as a substrate... it may suffice to slightly modify some internal connections of a suitable Hall device
Data Source
AI summary
An electronic device includes a number of n Hall effect regions with n>1, wherein the n Hall effect regions are isolated from each other. The electronic device also includes at least eight contacts in or on surfaces of the n Hall effect regions, wherein the contacts include: a first and a second contact of each Hall effect region. A first contact of the (k+1)-th Hall effect region is connected to the second contact of the k-th Hall effect region for k=1 to n−1, and the first contact of the first Hall effect region is connected to the second contact of the n-th Hall effect region. The at least eight contacts include at least two supply contacts and at least two sense contacts. Each Hall effect region includes at most one of the at least two supply contacts and at most one of the at least two sense contacts.