Ring-Shaped HV Junction Termination for Breakdown Voltage Control
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Solution Overview
Problem
High-voltage devices face issues with breakdown voltage due to electric field crowding caused by complex circuit designs and dimensional changes, particularly at the interface between different elements, leading to inefficiencies in switching applications.
Innovation Solution
The integration of a high-voltage junction termination element, an embedded bootstrap diode, and a junction field-effect transistor with a ring-shaped configuration, where the drain-doped region of the junction field-effect transistor is removed to alleviate electric field crowding, and the use of deep well regions and doped regions to enhance breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If complex circuit designs and dimensional changes are used to achieve high-voltage device functionality, then device functionality is improved, but electric field crowding occurs leading to reduced breakdown voltage
Solution Approach 1:
The device is segmented into distinct functional regions including a first region with the junction field-effect transistor, a second region with the diode, and a third region that is a doped region extending from the first to the second region. This segmentation allows each region to be optimized independently, reducing electric field crowding at interfaces while maintaining overall device functionality.
Solution Approach 2:
Different regions of the device are given different doping characteristics and structural properties. The junction field-effect transistor region has specific doped regions for channel formation, the diode region has optimized doping for rectification, and the third region provides a transition zone with graded doping. This local quality optimization reduces electric field concentration at critical interfaces.
2Ease of manufacture
If traditional high-voltage device structures are used, then manufacturing simplicity is maintained, but breakdown voltage is insufficient
Solution Approach 1:
The invention merges the junction field-effect transistor, diode, and their interconnect structures into a single integrated device structure formed in a semiconductor substrate. The third region acts as a shared doped region that electrically connects the transistor and diode while providing breakdown voltage enhancement. This merging eliminates the need for separate wire bonding and external connections, simplifying manufacturing while achieving high breakdown voltage through the integrated third region design.
Data Source
AI summary
A high-voltage device includes: a diode; a junction field-effect transistor (JFET) adjoining the diode and electrically coupled to the diode; a high-voltage junction termination (HVJT) element electrically connected with the diode and the junction field-effect transistor, wherein the high-voltage junction termination element is a ring shape from top view, and a high-side region and a low-side region are respectively defined inside the ring shape and outside the ring shape; and a first deep well region encircling the high-side region. The first deep well region includes: a first segment disposed in the high-voltage junction termination element; and a second segment disposed in the junction field-effect transistor. The first segment includes a well region and a doped region in the well region. The second segment includes only the well region.