Ring-Like Contact Electrode for Semiconductor Interconnects
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor devices like resistance change memories, the deterioration of contact electrode and interconnect connections leads to increased contact resistance and dispersed electric characteristics, particularly when the area for the contact electrode is reduced, affecting the performance and reliability of the memory cells.
Innovation Solution
A semiconductor device design featuring a ring-like contact portion between interconnects of different levels, where the contact electrode passes through the ring-like portion to connect the interconnects, allowing for stable alignment and reduced contact resistance by adjusting the line width and area of the ring-like contact portion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the area for disposing the contact electrode is reduced, then the memory cell density is improved, but the contact resistance increases and electric characteristics disperse
Solution Approach 1:
The patent transitions from a conventional planar contact electrode to a three-dimensional stacked structure where contact portions are arranged vertically across multiple interconnect levels. This dimensional change allows the contact electrode to maintain sufficient contact area while occupying less planar space, thereby reducing contact resistance without compromising memory cell density.
Solution Approach 2:
The contact electrode is designed with nested contact portions that are stacked vertically, where each contact portion is positioned at a different interconnect level. This nesting arrangement maximizes the effective contact area within a compact footprint, enabling reduced planar area while maintaining reliable electrical connection.
2Ease of manufacture
If conventional contact electrode design is used, then the manufacturing process is simple, but the connection stability deteriorates leading to increased contact resistance
Solution Approach 1:
The contact electrode is segmented into multiple discrete contact portions, each positioned at a specific interconnect level. This segmentation allows for optimized electrical connection at each level while maintaining overall manufacturing simplicity through standardized formation processes for each segment.
Data Source
AI summary
According to one embodiment, a semiconductor device includes a substrate and an interconnect region on the substrate. The interconnect region includes a first interconnect having a first contact portion whose plane shape is a ring-like plane shape, a second interconnect disposed below the first interconnect, and a contact electrode passing through the ling-like portion of the first contact portion and electrically connecting the first interconnect and the second interconnect.