Ring-Shaped Magnetoresistive Memory Device Writing Method
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Solution Overview
Problem
Conventional writing methods for ring-shaped magnetoresistive memory devices face challenges such as high energy consumption, complex manufacturing processes, and high costs, which limit the enhancement of record density and manufacturing yield.
Innovation Solution
A writing method involving a ring-shaped magnetoresistive memory device with a first and second conductor positioned on opposite surfaces, generating perpendicular magnetic field pulses with a time delay to orientate magnetic moments, allowing for efficient data recording without requiring complex manufacturing processes or high energy consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional magnetic writing method is used to change magnetization direction of memory cell, then data can be written, but energy consumption increases and memory cell may burn out
Solution Approach 1:
The patent changes the writing mechanism from direct magnetic field application to thermal field application. By heating the memory cell above Curie temperature and then cooling it, the magnetization direction is changed without requiring high magnetic fields, thus reducing energy consumption and avoiding memory cell damage
Solution Approach 2:
The patent replaces the magnetic field-based writing mechanism with a thermal field-based mechanism. Instead of using magnetic fields to directly change magnetization, the patent uses controlled heating and cooling cycles to achieve magnetization reversal, substituting mechanical/magnetic action with thermal action
2Ease of manufacture
If current writing method with spin transfer torque is used, then magnetization direction can be changed, but manufacturing difficulty and cost increase
Solution Approach 1:
The patent uses the memory cell's own thermal properties (Curie temperature) to enable writing. The memory cell material itself provides the mechanism for writing through thermal field application, eliminating the need for complex spin-polarized current generation and reducing manufacturing complexity
3Reliability
If oval-shaped memory cell is used to maintain data stability, then data stability is achieved, but record density is limited due to magnetostatic interaction
Solution Approach 1:
The patent changes the memory cell shape from oval to ring-shaped. This geometric change eliminates magnetic charges at the boundary and reduces magnetostatic interaction between adjacent cells, allowing higher record density while maintaining data stability through the circular arrangement of magnetic moments
4Quantity of substance
If ring-shaped memory cell is used to enhance record density, then record density increases, but writing difficulty increases
Solution Approach 1:
The patent uses periodic thermal action (heating and cooling cycles) to write data in ring-shaped memory cells. By applying thermal fields in a controlled periodic manner, the magnetic moments can be oriented in desired directions (clockwise or counterclockwise) to represent binary data, simplifying the writing process for ring-shaped structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables low-energy, cost-effective data recording with enhanced record density by orienting magnetic moments in ring-shaped memory cells, simplifying the manufacturing process and improving yield.
Implementation Method 1
a first conductor (300) positioned on a first surface of the ring-shaped magnetoresistive memory cell (100) for generating a first magnetic field pulse (M1)
Implementation Method 2
a second conductor (200) positioned on a second surface of the ring-shaped magnetoresistive memory cell (100) for generating a second magnetic field pulse (M2)
Implementation Method 3
the orientations of the magnetic moments with a low energy-consuming method for practical application
Implementation Method 4
The non-magnetic metallic material may be made of a giant magnetoresistance (GMR)-based component
Implementation Method 5
The non-conductive material may be made of a tunneling magnetoresistance (TMR)-based component
Data Source
AI summary
A ring-shaped magnetoresistive memory device includes a ring-shaped magnetoresistive memory cell, a first conductor, and a second conductor. The first conductor is positioned on a first surface of the ring-shaped magnetoresistive memory cell for generating a first magnetic field pulse. The second conductor is positioned on a second surface of the ring-shaped magnetoresistive memory cell for generating a second magnetic field pulse. The first surface is opposite to the second surface. An extension direction of the first conductor is perpendicular to an extension direction of the second conductor. A time delay is between the first magnetic field pulse and the second magnetic field pulse.