Liquid Processing Apparatus Rinsing Depth Control
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Solution Overview
Problem
In liquid processing apparatuses for semiconductor wafers or liquid crystal substrates, the dissolution of nitrogen gas and carbon dioxide in rinsing liquids prolongs the time required for specific resistance to reach a predetermined value, thereby increasing processing time and reducing throughput.
Innovation Solution
The apparatus includes a control system that adjusts the position of the supporting instrument to reduce the distance between the rinsing liquid surface and the object being processed, shortening the distance and thereby reducing the time needed for the rinsing liquid's specific resistance to reach the predetermined value by minimizing the amount of dissolved gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the supporting instrument is kept at the same level during rinsing as during chemical liquid processing, then the object is fully immersed in the rinsing liquid, but nitrogen gas and carbon dioxide gas dissolve into the rinsing liquid, prolonging the time required for specific resistance to reach the predetermined value
Solution Approach 1:
The supporting instrument is made dynamically adjustable in height. During rinsing, the control section raises the supporting instrument to a higher position than during chemical liquid processing, reducing the immersion depth of the object in the rinsing liquid. This dynamic adjustment minimizes gas dissolution while maintaining adequate rinsing effectiveness.
Solution Approach 2:
The height position of the supporting instrument is changed as a control parameter. By raising the supporting instrument during rinsing, the volume of rinsing liquid in contact with air is reduced, thereby reducing the dissolution of nitrogen and carbon dioxide gases and accelerating the recovery of specific resistance.
2Reliability
If the object is fully immersed in the rinsing liquid, then thorough rinsing is achieved, but the dissolution of gases into the rinsing liquid increases, requiring longer processing time
Solution Approach 1:
The system dynamically adjusts the immersion depth by raising the supporting instrument during rinsing. This maintains sufficient contact between the object and rinsing liquid for effective cleaning while minimizing the overall volume of liquid exposed to atmospheric gases, thus reducing gas dissolution and speeding up the process.
Solution Approach 2:
The immersion depth parameter is optimized by changing the height of the supporting instrument. This parameter adjustment achieves a balance between rinsing effectiveness and gas dissolution minimization, improving both reliability and productivity.
3Ease of operation
If nitrogen gas and carbon dioxide gas are present in the processing environment, then normal atmospheric conditions are maintained, but these gases dissolve into the rinsing liquid, extending the time to reach predetermined specific resistance
Solution Approach 1:
The harmful effect of gas dissolution is extracted and minimized by reducing the contact surface and volume between the rinsing liquid and atmospheric gases. This is achieved by raising the supporting instrument, thereby removing excess rinsing liquid from the processing space where gas dissolution occurs.
Solution Approach 2:
The presence of atmospheric gases, which normally cause harmful dissolution, is converted into a beneficial situation by reducing the liquid volume exposed to these gases. The same atmospheric conditions that would normally prolong processing time now have minimal impact due to the reduced exposure area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the time required for the rinsing process, enhancing the manufacturing throughput by minimizing gas dissolution and optimizing the processing time.
Implementation Method 1
nitrogen gas and/or carbon dioxide gas in the air is dissolved into the surface of the rinsing liquid upon the rinsing process
Data Source
AI summary
A processing apparatus is provided for enhancing throughput in the manufacture of semiconductor wafers and/or liquid crystal substrates, by reducing the time required for performing a rinsing process. A position of an object to be processed is controlled, such that a distance between the surface position of a rinsing liquid upon the rinsing process and a top end position of the object to be processed becomes shorter than a distance between the surface position of a chemical liquid upon a chemical liquid process and the top end position of the object to be processed. Alternatively, the position of the object to be processed is controlled, such that the distance between the surface position of the rinsing liquid upon the rinsing process and the top end position of the object to be processed becomes shorter than a distance between the bottom face position of the rinsing liquid and a bottom end position of the object to be processed.