Rinsing Solution Viscosity Control for High Aspect Ratio Pattern Collapse
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Solution Overview
Problem
Current rinsing solutions, such as IPA methods, are inadequate in preventing pattern collapse on semiconductor substrates with high aspect ratios during the drying process due to capillary forces.
Innovation Solution
A rinsing solution with an organic solvent having a dynamic viscosity of equal to or smaller than 1.05×10^6 m^2/s and containing no hydroxyl group or fluorine atom, or a compound represented by General Formula (S1-1), is used to uniformly spread and evaporate on the substrate surface, reducing pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If IPA is supplied to substrate after rinsing treatment with pure water, then pattern collapse is prevented to some extent, but pattern collapse still occurs on substrates with high aspect ratio patterns
Solution Approach 1:
The patent changes the physical parameters of the rinsing solution by selecting organic solvents with specific viscosity ranges (1.05×10^-6 to 5.00×10^-6 m²/s) and surface tension properties. This parameter optimization allows the solution to effectively prevent pattern collapse on high aspect ratio patterns where conventional IPA fails, while maintaining ease of removal during drying.
Solution Approach 2:
The patent replaces the conventional IPA rinsing solution with alternative organic solvents that have different but optimized physical properties. This substitution copies the functional role of IPA while achieving superior performance in preventing pattern collapse on high aspect ratio structures through controlled capillary forces.
2Ease of operation
If rinsing solution is removed during drying treatment, then substrate is dried, but pattern collapse occurs due to capillary force of remaining rinsing solution
Solution Approach 1:
The patent optimizes the viscosity and surface tension parameters of the rinsing solution to achieve an ideal balance: the solution remains in the patterns long enough to provide protective effects during drying, yet has sufficiently low viscosity to be easily removed without causing pattern collapse. The specified viscosity range ensures controlled capillary forces that prevent collapse while allowing complete removal.
Solution Approach 2:
The organic solvent acts as an intermediary substance during the drying process. It replaces water in the patterns and provides a controlled environment that prevents pattern collapse while being easily removable. The mediator facilitates the transition from wet to dry state without causing harmful capillary forces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents pattern collapse on substrates with high aspect ratios by forming a uniform fluid film that is easily removed, thereby maintaining pattern integrity during drying.
Implementation Method 1
the IPA having a lower surface tension than water is shaken off and dried
Implementation Method 2
the IPA fluid film is removed from the substrate
Data Source
AI summary
A rinsing solution for rinsing a substrate with a protrusion portion, including an organic solvent (S1) that contains no hydroxyl group or fluorine atom and that has a dynamic viscosity of equal to or smaller than 1.05×106 m2/s. A method of treating a substrate with a protrusion portion, including a step (A) of bringing the rinsing solution into contact with a surface of the substrate with the protrusion portion, the protrusion portion being formed on the surface; and a step (B) of removing the rinsing solution from the surface on which the protrusion portion is formed.