Rock Salt Nitride Buffer Layer for Light Emitting Devices

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Lattice mismatch between substrates and nitride semiconductor layers in light emitting devices leads to lattice defects, affecting the stability and reliability of the devices.

Innovation Solution

Incorporating a rock salt structured nitride buffer layer between the light emitting structure and the sapphire substrate to reduce lattice mismatch and thermal expansion coefficient differences, enhancing the stability and reliability of the light emitting device.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If a nitride semiconductor layer is formed directly on a sapphire substrate, then the device structure is simple, but lattice mismatch causes lattice defects reducing device reliability

Engineering Contradiction:
Improvedevice structureVSAvoiddevice reliability
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

A buffer layer comprising multiple nitride layers with different aluminum compositions is inserted between the sapphire substrate and the light emitting structure. This intermediate buffer layer gradually transitions the lattice constant from the sapphire substrate to the GaN light emitting layer, reducing lattice mismatch and minimizing lattice defects while maintaining device reliability

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If a buffer layer is added to reduce lattice mismatch, then device reliability is improved, but device complexity increases

Engineering Contradiction:
Improvedevice reliabilityVSAvoiddevice structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The buffer layer is designed with spatially varying aluminum composition, where the first nitride layer has a higher aluminum content closer to the sapphire substrate and the second nitride layer has a lower aluminum content closer to the GaN layer. This local composition gradient optimally matches lattice constants at different positions, effectively reducing lattice defects while using a relatively simple multi-layer structure

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS8729576B2Light emitting device
Publication Date: 2014.05.20 SUZHOU LEKIN SEMICON CO LTD
  • US8729576B2 patent drawing
  • US8729576B2 patent drawing
  • US8729576B2 patent drawing

AI summary

A light emitting device is provided that includes a substrate, a buffer layer disposed on an r-plane of the substrate, the buffer layer having a rock salt structured nitride, and a light emitting structure arranged on the buffer layer, the light emitting structure being grown in an a-plane.