Rod LED Regrowth Layer for Surface Leakage Reduction
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Solution Overview
Problem
Existing display apparatuses using semiconductor LEDs as pixels face challenges in achieving high luminance and optical efficiency, particularly in compact designs without additional backlights.
Innovation Solution
A semiconductor light emitting device is designed with a light emitting structure in the form of a rod, featuring a regrowth semiconductor layer surrounding its side surface. This regrowth layer has varying thicknesses along the perimeter and is formed of crystallographic planes, minimizing surface leakage and repairing crystallographic defects from dry etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If a compact display apparatus design without additional backlight is implemented, then device size is reduced and optical efficiency is improved, but manufacturing precision and reliability deteriorate due to crystallographic defects from dry etching
Solution Approach 1:
A regrowth semiconductor layer is formed in advance to cover and repair crystallographic defects on the side surface of the light emitting structure before these defects can cause surface leakage. This preliminary repair action prevents reliability issues before they occur during device operation.
Solution Approach 2:
The regrowth semiconductor layer acts as a protective buffer that compensates for and cushions against the harmful effects of crystallographic defects introduced during dry etching. This layer provides beforehand protection against surface leakage, ensuring reliable operation despite the compact design constraints.
2Productivity
If dry etching is used to form the light emitting structure, then manufacturing efficiency is improved, but crystallographic defects are introduced causing surface leakage
Solution Approach 1:
The regrowth semiconductor layer converts the harmful crystallographic defects from dry etching into a controlled repair process. By intentionally growing an additional layer, the defects are covered and repaired, transforming the manufacturing challenge into an opportunity for enhanced reliability through defect compensation.
3Ease of manufacture
If the regrowth semiconductor layer has uniform thickness, then manufacturing simplicity is maintained, but optical efficiency is insufficient
Solution Approach 1:
The regrowth semiconductor layer is designed with non-uniform thickness, where the thickness varies at different positions around the side surface of the light emitting structure. This local variation in thickness optimizes light extraction efficiency in different regions, allowing the structure to achieve superior optical performance by adapting the layer properties to local requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor light emitting device achieves improved reliability and optical efficiency by minimizing surface leakage and repairing crystallographic defects, enabling high integration and compact display apparatus designs with enhanced luminance.
Implementation Method 1
regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having an external side surface formed of crystallographic planes
Data Source
AI summary
A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.