Selective Removal of Defective Rod-Shaped Semiconductor Structures

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Solution Overview

Problem

In the manufacturing of semiconductor light emitting elements, defective rod-shaped structures near the electrode forming region can lead to inferior contact between the semiconductor and the electrode, resulting in varying film quality and increased manufacturing time due to the need for additional operations to remove remaining structures.

Innovation Solution

A method involving the sequential formation of a conductive-type semiconductor layer, insulating film, light-emitting layer, and conductive-type semiconductor layer, followed by the use of a photoresist pattern to selectively remove rod-shaped layered structures, ensuring reliable removal of structures on the electrode forming surface.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a mask layer with openings is used to form rod-shaped structures, then the rod-shaped structures can be formed on the substrate, but defective rod-shaped structures may occur at openings located at the outer peripheral portion of the mask, resulting in inferior contact quality

Engineering Contradiction:
Improvecontact qualityVSAvoidstructure quality
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent extracts and removes the defective rod-shaped structures that form at the outer peripheral openings of the mask layer. By selectively eliminating these defective structures before electrode formation, the method ensures that only high-quality rod-shaped structures remain, thereby guaranteeing superior contact quality between electrodes and semiconductor structures.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent performs preliminary removal of defective rod-shaped structures formed at mask peripheral openings before the electrode formation step. This preliminary action prevents defective structures from interfering with subsequent electrode deposition, ensuring that electrodes are formed only on high-quality semiconductor structures, thus maintaining high contact quality.

Inventive Principle:
Principle #10Preliminary action

2Ease of manufacture

If rod-shaped structures are formed and then a part is removed to provide an electrode forming region, then electrodes can be disposed on the region, but additional operations are required to remove remaining rod-shaped structures, increasing manufacturing time

Engineering Contradiction:
Improveelectrode formationVSAvoidmanufacturing time
Core Design Contradiction:
Ease of manufactureVSLoss of time

Solution Approach 1:

The patent extracts and removes remaining rod-shaped structures from the electrode forming region after the main removal step. This additional extraction operation ensures that no rod-shaped structures remain to interfere with electrode formation, enabling straightforward electrode deposition without requiring complex rework or multiple removal cycles, thus balancing ease of manufacture with time efficiency.

Inventive Principle:
Principle #2Taking out (Extraction)

3Manufacturing precision

If the mask layer is retained during the removal process, then the removal can be performed selectively, but portions of rod-shaped structures may remain in the openings of the mask layer, requiring additional operations

Engineering Contradiction:
Improveselective removalVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extracts and removes remaining rod-shaped structures from mask layer openings after the selective removal process. This additional extraction step ensures complete clearance of rod-shaped structures from the electrode forming region, eliminating the need for complex rework procedures while maintaining the benefits of selective removal during the main process.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent discards the mask layer after it has served its purpose of defining the rod-shaped structures. By removing and discarding the mask layer after rod formation, the process simplifies subsequent steps as there are no mask constraints, allowing complete removal of remaining rod structures without complex operations while maintaining the precision benefits during the formation stage.

Inventive Principle:
Principle #34Discarding and recovering

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables reliable removal of rod-shaped structures on the electrode forming surface, improving contact quality and reducing manufacturing time by avoiding the need for additional operations to address defective structures.

Implementation Method 1

forming a photoresist pattern covering a portion of the plurality of the rod-shaped layered structures

Methodology Applied
Scientific EffectPhotoresist pattern formation: Photopolymerisation

Data Source

PatentUS20200127158A1Method of manufacturing light emitting element
Publication Date: 2020.04.23 NICHIA CORP
  • US20200127158A1 patent drawing
  • US20200127158A1 patent drawing
  • US20200127158A1 patent drawing

AI summary

A method of manufacturing a light-emitting element includes: forming a plurality of rod-shaped layered structures by performing steps including: forming a first conductive-type semiconductor layer on a substrate, forming, on the first conductive-type semiconductor layer, an insulating film defining a plurality of openings and a plurality of rods of a first conductive-type semiconductor, wherein each of the rods is disposed through a respective one of the plurality of openings, forming a light-emitting layer covering outer surfaces of the plurality of rods, and forming a second conductive-type semiconductor layer covering outer surfaces of the light-emitting layer; forming a photoresist pattern covering a portion of the plurality of the rod-shaped layered structures; removing a portion of the insulating film in a region that is not covered by the photoresist pattern; and removing a portion of the plurality of rod-shaped layered structures in the region that is not covered by the photoresist pattern.