Hydrogenated ROMP Resist for Fine Pattern Resolution
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Solution Overview
Problem
Current pattern forming processes face challenges in achieving high resolution and dry etch resistance for fine trench or hole patterns, particularly in negative tone development, where the low dissolution contrast and etch resistance of existing resist compositions limit the ability to form patterns with narrow pitches and small features.
Innovation Solution
A resist composition featuring a hydrogenated ring-opening metathesis polymerization (ROMP) polymer with specific recurring units and an acid labile group is used, which exhibits high dissolution contrast and dry etch resistance during organic solvent development, enabling improved size control and etch resistance for fine patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used for negative tone development, then the process is simple, but the dissolution contrast and dry etch resistance are insufficient for fine patterns
Solution Approach 1:
The patent employs a composite resist composition comprising a hydrogenated ROMP polymer as base resin, a specific glass transition temperature range (80°C to 150°C), and acid labile groups. This composite structure provides both high dissolution contrast in organic solvents and sufficient dry etch resistance, resolving the contradiction between manufacturing precision and material complexity by integrating multiple functional components into a unified resist system.
Solution Approach 2:
The patent utilizes parameter changes by controlling the glass transition temperature (Tg) of the hydrogenated ROMP polymer within a specific range (80°C to 150°C) and adjusting the acid labile group content (0.1 to 10 mmol/g). These parameter optimizations enable the resist to achieve high dissolution contrast while maintaining dry etch resistance, thereby improving fine pattern resolution without excessive complexity.
2Reliability
If existing resist compositions are used, then the process is straightforward, but dry etch resistance is low limiting pattern transfer quality
Solution Approach 1:
The resist composition is designed as a composite material combining a hydrogenated ROMP polymer backbone with acid labile groups and specific Tg characteristics. This composite structure provides inherent dry etch resistance while maintaining solubility contrast, eliminating the need for additional etch resistance layers and simplifying the overall process despite the sophisticated molecular structure.
Solution Approach 2:
The patent applies local quality by incorporating acid labile groups at specific locations within the polymer structure (0.1 to 10 mmol/g). These localized functional groups provide the necessary dry etch resistance and dissolution contrast without requiring the entire resist composition to be complex, thereby achieving high reliability with controlled structural complexity.
3Manufacturing precision
If conventional resist materials are used for narrow pitch patterns, then the process is simple, but the dissolution contrast is low reducing pattern definition
Solution Approach 1:
The patent achieves high dissolution contrast by optimizing specific parameters: glass transition temperature (Tg) between 80°C and 150°C, and acid labile group content of 0.1 to 10 mmol/g. These parameter adjustments create a resist that selectively dissolves in organic solvents with high contrast, enabling excellent pattern definition for narrow pitch features while maintaining a relatively simple compositional framework.
Solution Approach 2:
The resist composition functions as a composite material where the hydrogenated ROMP polymer provides structural integrity and the acid labile groups provide selective solubility. This composite approach delivers high dissolution contrast and sharp pattern definition without requiring multiple separate layers or complex processing steps.
4Duration of action of stationary object
If standard resist compositions are used, then the process is straightforward, but etch resistance deteriorates after substrate processing
Solution Approach 1:
The patent creates a durable resist composition by combining a hydrogenated ROMP polymer with specific Tg (80°C to 150°C) and acid labile groups (0.1 to 10 mmol/g). This composite structure maintains etch resistance throughout substrate processing by providing a robust polymer backbone that resists degradation, while the acid labile groups ensure proper pattern formation. The result is long-lasting etch resistance without requiring excessive structural complexity.
Solution Approach 2:
The resist composition is designed with inherent etch resistance properties before substrate processing begins. The hydrogenated ROMP polymer structure and acid labile group configuration provide a cushion of protection against etch damage during subsequent processing steps, ensuring that etch resistance is maintained throughout the entire fabrication sequence without needing additional protective measures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resist composition effectively enhances the resolution and dry etch resistance of fine trench or hole patterns, allowing for successful pattern transfer and maintaining high etch resistance even after substrate processing.
Implementation Method 1
exposure, post-exposure baking to effect deprotection reaction under the catalysis of an acid generated by a photoacid generator
Implementation Method 2
developing with an organic solvent to dissolve the unexposed region, but not the exposed region of the resist film
Data Source
AI summary
A negative pattern is formed by applying a resist composition onto a substrate, baking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to selectively dissolve the unexposed region of resist film. The resist composition comprising a hydrogenated ROMP polymer comprising recurring units having an acid labile group-protected carboxyl group and recurring units having a lactone structure displays a high dissolution contrast in organic solvent development, and exhibits high dry etch resistance even when the acid labile group is deprotected through exposure and PEB.