Room Temperature Bonding Device with Independent Beam Sources
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Solution Overview
Problem
Existing room temperature bonding methods face challenges in bonding substrates made of different materials, as they often struggle with uneven oxide film and adsorption layer removal, leading to improper bonding due to varying etching rates and surface conditions.
Innovation Solution
A room temperature bonding apparatus with independent beam sources for each substrate, allowing for customized activation conditions, including varying irradiation periods, energies, and gas types, to optimize surface states for bonding, and the option to form an intermediate adhesive layer by depositing particles from one substrate onto the other.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the same etching conditions are applied to both substrates, then the process is simple, but the oxide film and adsorption layer cannot be appropriately removed from substrates of different materials
Solution Approach 1:
The patent divides the activation process into separate steps for each substrate. The first substrate is activated, then the second substrate is activated independently. This segmentation allows different activation conditions to be applied to each substrate according to its material properties, resolving the contradiction between process simplicity and surface activation uniformity.
Solution Approach 2:
The patent applies different activation conditions to different substrates based on their material characteristics. Each substrate receives customized activation parameters (such as ion beam energy, gas type, and irradiation time) suited to its specific material requirements, achieving local optimization of surface activation quality.
2Manufacturing precision
If independent beam sources are used for each substrate, then surface activation can be optimized for each material, but the device complexity increases
Solution Approach 1:
The activation device is segmented into multiple independent beam sources, with each beam source dedicated to activating a specific substrate. This segmentation enables precise control over activation conditions for each substrate material, achieving optimal surface activation despite the increased device complexity.
Solution Approach 2:
Each beam source is designed to be multi-functional, capable of adjusting various parameters (ion beam energy, gas type, irradiation time) to handle different substrate materials. This universality allows the complex device to maintain flexibility and adaptability across different bonding applications.
3Reliability
If etching is performed on substrates with different materials, then bonding can be achieved, but uneven oxide film removal occurs leading to improper bonding
Solution Approach 1:
The patent segments the etching process into separate activation steps for each substrate. By activating substrates independently before bonding, the process allows precise control over oxide film removal for each material type, ensuring uniform and appropriate removal without compromising bonding quality.
Solution Approach 2:
The patent changes activation parameters (ion beam energy, gas composition, irradiation duration) according to the specific material properties of each substrate. This parameter optimization ensures that oxide films are removed uniformly and appropriately from different materials, achieving reliable bonding.
4Adaptability or versatility
If intermediate material is used for bonding different substrates, then bonding is enabled, but the manufacturing process becomes more complex
Solution Approach 1:
The patent uses an intermediate layer formed by depositing particles from the first substrate onto the second substrate during the activation process. This intermediate layer acts as a mediator that enhances adhesion between substrates of different materials, enabling bonding without requiring additional intermediate materials or complex process steps.
Solution Approach 2:
The activation process itself serves dual purposes: it activates the substrate surfaces for bonding while simultaneously depositing particles to form an intermediate adhesive layer. This self-service approach eliminates the need for separate intermediate material deposition steps, reducing process complexity while maintaining material compatibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables more effective bonding of substrates with different materials by ensuring suitable surface states and improving adhesion characteristics, reducing dependency on material types and enhancing bonding strength.
Implementation Method 1
bonding surfaces of both the silicon wafers are sputtered and etched with an inert gas ion beam or an inert gas fast atom beam in a vacuum environment at room temperature
Implementation Method 2
a press bonding mechanism for bonding between the first substrate and the second substrate by contacting between the first surface and the second surface
Data Source
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AI summary
A normal temperature bonding device is provided with a first beam source, a second beam source, and a pressure welding mechanism. The first beam source outputs a first activation beam that irradiates a first surface of a first substrate, and independently thereof, the second beam source outputs a second activation beam that irradiates a second surface of a second substrate. The pressure welding mechanism joins the first substrate and the second substrate by contact between the first surface and the second surface after the first activation beam has irradiated the first surface and the second activation beam has irradiated the second surface. Thus, a plurality of substrates of different materials is appropriately joined.