Rotatable Carousel Ion Beam Target Alignment
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Solution Overview
Problem
Broad ion beam deposition (BIBD) apparatuses face inefficiencies due to non-uniform ion beams and stray sputtering, limiting their application to high-value goods where specific film properties are essential, and throughput is low.
Innovation Solution
The apparatus features a rotatable target support with rectangular targets aligned to a rectangular ion beam, and a plasma source with a unique grid arrangement and power absorption system to produce a uniform plasma density and reduce beam divergence, allowing for efficient sputtering across the target and minimizing stray impacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a circular ion beam is used with a rectangular target, then the beam can be produced by conventional ion sources, but the target utilization is poor and stray sputtering occurs
Solution Approach 1:
The patent changes the beam cross-sectional shape parameter from circular to rectangular by modifying the ion source geometry and grid arrangement. This allows the beam profile to match the rectangular target shape, improving target utilization and eliminating stray sputtering while maintaining compatibility with conventional ion source manufacturing
2Adaptability or versatility
If multiple targets are mounted on a carousel, then material variety is increased, but the beam area must be reduced to avoid stray impacts on adjacent targets
Solution Approach 1:
The patent positions targets on the carousel such that each target is pre-aligned to be in the shadow of the beam impinging on the succeeding location. This preliminary geometric arrangement prevents stray beam impacts on adjacent targets, allowing full beam area utilization while maintaining multiple target capability
Solution Approach 2:
The patent employs asymmetric spacing and angular positioning of rectangular targets on the carousel, where each target is oriented at a specific angle relative to the beam axis. This asymmetric configuration ensures that targets are positioned in shadow zones, preventing interference between adjacent targets while maximizing beam area utilization
3Manufacturing precision
If the ion beam is highly collimated, then beam precision is improved, but beam divergence control becomes difficult and plasma uniformity decreases
Solution Approach 1:
The patent employs a multi-grid accelerator system where each grid can be independently controlled to create localized electric field variations. This allows different regions of the beam to have different collimation characteristics, achieving high overall precision while maintaining plasma uniformity through localized field adjustments
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the efficiency of ion beam deposition by ensuring uniform sputtering, reducing waste, and enabling flexible material use, while maintaining precision and reducing operational costs through improved plasma uniformity and beam control.
Implementation Method 1
an ion source for producing an ion beam
Implementation Method 2
an accelerator mounted at the outlet for drawing a stream of ions from the plasma and forming them into a beam
Implementation Method 3
the target to sputter material onto a substrate
Data Source
AI summary
This invention relates to a broad beam ion deposition apparatus (100) including an ion source (101), a target (102), a tillable substrate table (103) and an auxiliary port (104). The target (102) is in the form of a carousel which carries a number of targets and the ion source (101) is configured to produce a substantially rectangular section beam (105).