Rotatable Dual Diffusion Plate for CVD Film Thickness Control
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Solution Overview
Problem
In semiconductor manufacturing, the existing diffusion plates designed for a specific film type in lamination deposition processes often degrade the in-plane distribution of film thickness for other types of films, limiting the versatility and accuracy of film thickness control.
Innovation Solution
A semiconductor manufacturing method using a dual diffusion plate system where the relative position between the first and second through holes is adjusted to achieve desired in-plane distributions for different films, allowing for precise control of gas flow and film thickness by rotating the second diffusion plate to change the overlapping areas and positions of the holes between film formations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the diffusion plate is designed with through holes optimized for one type of film, then the in-plane distribution of film thickness for that specific film is improved, but the in-plane distribution for other types of films is degraded
Solution Approach 1:
The diffusion plate system employs a rotatable second diffusion plate that can change its angular position relative to the first diffusion plate. This dynamic configuration allows the overlapping pattern of through holes to be adjusted between different film deposition processes, enabling optimized in-plane distribution for each film type while maintaining versatility across multiple film types.
Solution Approach 2:
The dual diffusion plate system with adjustable relative positioning serves multiple functions: it can be configured to optimize gas flow distribution for different film types (silicon oxide, silicon nitride, etc.). By making the system multi-functional through positional adjustment, it resolves the contradiction between being specialized for one film type versus being versatile for multiple film types.
2Manufacturing precision
If the through holes are specialized for one film type to achieve desired in-plane distribution, then manufacturing precision for that film is improved, but device complexity increases due to need for multiple plate designs
Solution Approach 1:
The diffusion plate is segmented into two separate plates (first and second diffusion plates) with distinct through hole patterns. Each plate can be independently designed and optimized, but together they provide the versatility to handle multiple film types. This segmentation allows each plate to have a simpler, more specialized design while the combination provides the needed versatility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the attainment of desired in-plane distributions for both the first and second films, increasing the yield and versatility of semiconductor devices with laminated films by allowing for precise control of film thickness and flow rates, and reducing the need for complex plate designs.
Implementation Method 1
The diffusion plate has a plurality of through holes allowing the process gas to pass therethrough toward a wafer
Implementation Method 2
a manufacturing process of a semiconductor device uses a CVD apparatus that forms a film by a CVD (Chemical Vapor Deposition) method
Data Source
AI summary
A semiconductor manufacturing method includes setting a relative position between first through holes of a first plate-shaped part and second through holes of a second plate-shaped part to a first relative position. The method includes supplying a first gas containing a component of the first film onto the semiconductor substrate in a reactor through the first through holes not closed with the second plate-shaped part, to form the first film on the semiconductor substrate. The method includes relatively moving the first plate-shaped part and the second plate-shaped part to change the relative position to a second relative position. The method includes supplying a second gas containing a component of the second film onto the semiconductor substrate through the first through holes not closed with the second plate-shaped part, to laminate the second film on the first film.