Rotatable Plasma Exit Aperture for Vacuum Angle Adjustment

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Solution Overview

Problem

Existing methods for angled ion implantation in semiconductor fabrication, such as tilting the platen or controlling the plasma sheath, suffer from process variations and limitations in current extraction, particularly when different exit angles are required for various processes involving both charged ions and neutral particles.

Innovation Solution

A plasma source with an adjustable exit aperture, featuring a rotatable adjustable output plate and optional biased external plates, allows for precise adjustment of exit angles without breaking vacuum, enabling flexible processing for both ions and neutral particles.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If the platen is tilted to achieve angled ion implantation, then the ion beam strikes the substrate at a non-zero angle, but the various regions of the substrate are at different distances from the beam source causing process variations across the substrate

Engineering Contradiction:

Improveangled ion implantationVSAvoidprocess uniformity across substrate

Core Design Contradiction:

Ease of operationVSManufacturing precision

Solution Approach 1:

The exit aperture is made rotatable relative to the chamber housing, allowing dynamic adjustment of the beam exit angle. This enables the system to change the extraction angle without tilting the entire platen, maintaining uniform distance between the beam source and substrate while achieving different implantation angles through aperture rotation

Inventive Principle:

Principle #15Dynamics

Solution Approach 2:

The system separates the functions of angle control and position control. The rotatable exit aperture handles angle adjustment independently, while the platen remains stationary to maintain consistent positioning. This segmentation allows angle variation without compromising positional uniformity across the substrate

Inventive Principle:

Principle #1Segmentation

2Adaptability or versatility

If the plasma sheath shape is controlled to vary the ion extraction angle, then angled beams can be achieved, but the approach has limitations in terms of the amount of current that may be extracted and is specific to ions only

Engineering Contradiction:

Improveion extraction angle controlVSAvoidcurrent extraction capability

Core Design Contradiction:

Adaptability or versatilityVSProductivity

Solution Approach 1:

The system changes the geometric parameter of the exit aperture orientation rather than modifying plasma sheath properties. By rotating the exit aperture to different angles, the system achieves angle control without affecting plasma density or current extraction capability, thereby maintaining high productivity while achieving versatility for different beam angles

Inventive Principle:

Principle #35Parameter changes

3Adaptability or versatility

If different exit angles are used for different processes, then process flexibility is improved, but system complexity increases if vacuum breaks are required for reconfiguration

Engineering Contradiction:

Improveexit angle variation for different processesVSAvoidvacuum system reconfiguration

Core Design Contradiction:

Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The rotatable exit aperture provides dynamic angle adjustment capability within the vacuum chamber. Since the rotation mechanism is designed to operate under vacuum conditions, the system can switch between different process angles without breaking vacuum, thereby reducing device complexity related to vacuum reconfiguration while maintaining high adaptability for different processes

Inventive Principle:

Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables consistent processing across the substrate by allowing adjustable exit angles, reducing process variations, and facilitating multiple processing steps without vacuum breaks, thus enhancing the versatility and efficiency of semiconductor manufacturing.

Implementation Method 1

a plasma generator to generate a plasma within the plasma chamber

Methodology Applied

Scientific EffectPlasma generation: Plasma

Implementation Method 2

The plasma source is configured such that changes to the exit angle may be performed without breaking vacuum

Methodology Applied

Scientific EffectVacuum maintenance during mechanical adjustment: Vacuum

Data Source

PatentUS12537165B2Adjustable exit angle source for ions and neutral particles

Publication Date: 2026.01.27 APPLIED MATERIALS INC

AI summary

A plasma source having an adjustable exit aperture is disclosed. The plasma source has a cylindrical body and two ends, wherein a housing aperture is formed along the cylindrical body. An adjustable output plate is disposed on the cylindrical body and covers the housing aperture. The adjustable output plate has an exit aperture, smaller than the housing aperture. The adjustable output plate is capable of rotation in the circumferential direction, thus moving the position of the exit aperture relative to a workpiece holder. The plasma source is configured such that changes to the exit angle may be performed without breaking vacuum. In some embodiments, a defining aperture is located outside the exit aperture to define the path of radicals and neutrals. In other embodiments, biased electrodes may be disposed outside the exit aperture.