Rotatable Sputtering Apparatus for Magnetic Film Anisotropy Control
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Solution Overview
Problem
Existing sputtering apparatuses face challenges in forming magnetic films with reduced variation in magnetic anisotropy at high incident angles while maintaining a compact configuration and achieving dense deposition, as they often require complex and costly setups to control film thickness and incident direction.
Innovation Solution
A sputtering apparatus with a rotatable cathode and stage, equipped with an electrostatic adsorption mechanism and bias power source, allows for independent rotation of the cathode and stage to control the incident angle of sputtered particles, enabling the formation of magnetic films with improved anisotropy and density in a compact and simple configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a substrate-passing type deposition structure is used to cause sputtered particles to enter obliquely at high incident angles, then the uniaxial magnetic anisotropy is enhanced, but the apparatus size increases
Solution Approach 1:
The invention makes the target rotatable about a first rotation axis and the substrate holder rotatable about a second rotation axis, transforming the static substrate-passing structure into a dynamic system. This allows control of the incident angle through rotation rather than requiring a large linear movement range, thereby enhancing magnetic anisotropy while maintaining a compact apparatus size.
Solution Approach 2:
The invention introduces rotational degrees of freedom (first rotation axis for target, second rotation axis for substrate holder) to control the incident angle. This dimensional change from linear substrate movement to rotational positioning enables high incident angle deposition without increasing the linear footprint of the apparatus.
2Manufacturing precision
If multiple ion beam guns and rotating tables are used to achieve even film thickness, then the film uniformity is improved, but the device complexity increases
Solution Approach 1:
Instead of using multiple ion beam guns and complex multi-axis rotating tables, the invention employs a single ion beam gun with a rotatable target and a rotatable substrate holder. The dynamic rotation of these components during deposition achieves even film thickness distribution with a simpler apparatus structure.
Solution Approach 2:
The invention separates the rotation functions into two independent components: the target rotates about a first rotation axis and the substrate holder rotates about a second rotation axis. This segmentation allows independent control of each rotation, simplifying the overall system while achieving the desired film uniformity through coordinated rotation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for the formation of magnetic films with reduced anisotropy variation and enhanced density, even at high incident angles, while maintaining a compact and cost-effective apparatus design.
Implementation Method 1
the stage has an electrostatic adsorption mechanism
Implementation Method 2
the stage is electrically connected with a bias power source capable of applying a bias voltage to the stage
Implementation Method 3
a cathode having a sputtering target-supporting surface
Data Source
AI summary
The present invention provides a sputtering apparatus and a film-forming method capable of forming a magnetic film having a reduced variation in the orientation of the magnetic anisotropy. The sputtering apparatus of the present invention is equipped with a rotatable cathode and a rotatable stage. The stage can have an electrostatic chuck. Moreover, the stage may electrically be connected with a bias power source capable of applying a bias voltage to the stage. Furthermore, the stage may have the electrostatic chuck and electrically be connected with the bias power source.