Rotatable Sputtering Apparatus for Magnetic Film Uniformity

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Solution Overview

Problem

Current sputtering methods face challenges in uniformly depositing magnetic films with reduced variations in magnetic anisotropy and atomic density, leading to non-uniform performance of magnetic head chips due to varying angles of incidence of sputtered particles, which complicates the apparatus and increases costs.

Innovation Solution

A sputtering apparatus with a rotatable cathode and substrate stage, along with a shielding plate, controls the angle of incidence of sputtered particles between 0° and 50° to ensure uniform deposition, aligning the magnetically easy axis and maintaining high saturation magnetic flux density.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a collimator is arranged between target and substrate to select direction of incidence of sputtered particles, then uniform film deposition is achieved, but the number of arriving sputtered particles decreases resulting in decreased productivity

Engineering Contradiction:
Improveuniformity of film depositionVSAvoiddeposition rate
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The invention makes the target rotatable about a first rotating shaft and the substrate stage rotatable about a second rotating shaft, transforming the static collimation system into a dynamic one. By rotating the target and substrate stage, sputtered particles are made to impinge on the substrate from a controlled angular range (0° to 50°) without requiring a physical collimator, thus maintaining high deposition rates while achieving uniform film deposition.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the operational parameters by controlling the rotation of the target and substrate stage to regulate the angle of incidence of sputtered particles. Instead of using a fixed collimator that limits particle flux, the system dynamically adjusts the angular parameters through rotation, allowing sputtered particles to arrive within the optimal 0° to 50° range, thereby maintaining both productivity and uniformity.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If the diameter of the collimator is increased to allow sputtered particles from various directions to reach the substrate, then volume production is enabled, but variations in magnetic anisotropy are produced

Engineering Contradiction:
Improvevolume production capabilityVSAvoiduniformity of magnetic anisotropy
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The rotatable target and substrate stage create a dynamic system that controls the angular distribution of sputtered particles. By rotating the target about the first rotating shaft and the substrate stage about the second rotating shaft, the system enables volume production across the substrate surface while maintaining consistent angle of incidence (0° to 50°) for all regions, thereby achieving uniform magnetic anisotropy throughout the deposited film.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The invention changes the approach from static geometric control (collimator diameter) to dynamic parameter control (rotation speeds and angles). By adjusting the rotation parameters of the target and substrate stage, the system maintains the angle of incidence within the optimal 0° to 50° range for all substrate regions, enabling volume production without compromising the uniformity of magnetic anisotropy.

Inventive Principle:
Principle #35Parameter changes

3Area of stationary object

If the substrate or target is moved to achieve uniform film deposition, then coverage is improved, but the angle of incidence of sputtered particles varies depending on relative position causing variations in magnetic anisotropy

Engineering Contradiction:
Improvesubstrate coverage uniformityVSAvoiduniformity of angle of incidence
Core Design Contradiction:
Area of stationary objectVSManufacturing precision

Solution Approach 1:

The invention employs dual rotation: the target rotates about a first rotating shaft while the substrate stage rotates about a second rotating shaft. This dynamic configuration ensures that as the substrate moves to achieve uniform coverage, the angle of incidence of sputtered particles remains consistently within the 0° to 50° range across all positions, eliminating the variation problems associated with simple linear movement.

Inventive Principle:
Principle #15Dynamics

4Reliability

If diagonal incidence is used to generate shape magnetic anisotropy, then high magnetic anisotropy is achieved, but variations in magnetic anisotropy occur due to various angles of incidence in volume production

Engineering Contradiction:
Improvemagnetic anisotropy magnitudeVSAvoiduniformity of magnetic anisotropy
Core Design Contradiction:
ReliabilityVSManufacturing precision

Solution Approach 1:

The invention optimizes the angle of incidence parameter by controlling the rotation of the target and substrate stage to maintain angles between 0° and 50°. This parameter control generates shape magnetic anisotropy through diagonal incidence while ensuring uniformity across the substrate surface, thereby achieving both high magnetic anisotropy magnitude and uniformity required for reliable magnetic head chip performance.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively reduces variations in magnetic anisotropy and atomic density, enhancing the uniformity and performance of magnetic films while simplifying the apparatus configuration and reducing production costs.

Implementation Method 1

a sputtering target supported on the sputtering target supporting surface during sputtering

Methodology Applied
Scientific EffectSputtering: Sputtering

Data Source

PatentUS7955480B2Sputtering apparatus and film deposition method
Publication Date: 2011.06.07 CANON ANELVA CORP
  • US7955480B2 patent drawing
  • US7955480B2 patent drawing
  • US7955480B2 patent drawing

AI summary

The present invention provides a sputtering apparatus and a film deposition method capable of forming a magnetic film with reduced variations in the direction of magnetic anisotropy. The sputtering apparatus of the present invention is provided with a rotatable cathode (802), a rotatable stage (801) and a rotatable shielding plate (805). The sputtering apparatus controls the rotation of at least one of the cathode (802), stage (801) and shielding plate (805) so that sputtered particles impinging at an angle formed with respect to a normal line of the substrate (804) of 0° or more and 50° or less out of sputtered particles generated from the target (803a) during sputtering are made to impinge on the substrate (804).