Rotatable Sputtering Targets for Uniform Deposition
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Solution Overview
Problem
Existing sputtering apparatuses for large-scale substrates are costly and inefficient due to the need for multiple target devices, leading to uneven target particle distribution and poor surface quality on the substrate.
Innovation Solution
A sputtering apparatus with a susceptor and target devices positioned to cover the substrate's center and periphery, where the peripheral target devices are rotatable to ensure uniform target particle distribution, reducing the number of devices and apparatus size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If multiple target devices are arranged in a fixed linear configuration to cover large substrate areas, then the substrate coverage is improved, but the apparatus size and manufacturing cost increase significantly
Solution Approach 1:
The patent applies the dynamics principle by making the peripheral target devices rotatable around the central target device. This rotational capability allows a smaller number of target devices to cover a larger substrate area dynamically, resolving the contradiction between substrate coverage area and the number of target devices required.
Solution Approach 2:
The patent segments the target devices into a central fixed target and multiple peripheral rotatable targets. This segmentation allows the peripheral targets to be positioned optimally at different angles to cover different regions of the substrate, achieving comprehensive coverage with fewer devices than a purely fixed linear arrangement would require.
2Area of stationary object
If multiple fixed target devices are used to cover the entire substrate, then complete coverage is achieved, but uniform target particle distribution deteriorates due to fixed positioning
Solution Approach 1:
The rotational capability of peripheral target devices enables dynamic adjustment of particle deposition patterns. By rotating the peripheral targets to different angles, the system can distribute target particles more uniformly across the substrate surface, preventing the concentration issues that arise with fixed linear arrangements.
Solution Approach 2:
The patent employs asymmetric positioning of peripheral target devices around the central target, with each peripheral target capable of independent rotation. This asymmetric, rotatable configuration allows optimized particle distribution patterns that are not achievable with symmetric fixed arrangements, improving uniformity of deposition.
3Manufacturing precision
If the total distribution width of target devices is increased beyond substrate width to ensure uniform deposition, then deposition uniformity is improved, but the apparatus size increases beyond substrate size
Solution Approach 1:
The rotatable peripheral target devices can be positioned at optimal angles to direct particles toward specific substrate regions, eliminating the need for excessive horizontal spacing between targets. This dynamic positioning achieves uniform deposition without requiring the apparatus to be significantly larger than the substrate.
Solution Approach 2:
The patent introduces rotational movement as a new dimension of control, allowing target devices to cover areas beyond their static reach. By rotating peripheral targets around the central target, the system achieves comprehensive substrate coverage with a more compact apparatus footprint, effectively utilizing the vertical/rotational dimension rather than only horizontal expansion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a more compact and cost-effective sputtering apparatus that achieves uniform target particle deposition across the substrate, improving surface quality and operational characteristics.
Implementation Method 1
The magnet 7 is disposed on the rear surface of the baking plate 6 such that the magnet 7 induces electrons to be collected to facilitate a plasma discharge in an internal space 8 between the target 5 and the susceptor 2
Implementation Method 2
When a predetermined high voltage is applied between the susceptor 2 and the target 5 as a result of the predetermined negative voltage applied to each target 5 and the predetermined positive voltage supplied to the susceptor 2, the Ar gas in the space 8 between the target 5 and the susceptor 2 is ionized into Ar+ ions that form a plasma
Implementation Method 3
The Ar+ ions contained in the high-density plasma region are accelerated by the energy of the predetermined potential difference so as to collide against the target 5. These collisions cause the target 5 to emit target particles, and the emitted target particles are deposited on the substrate 1
Data Source
AI summary
A sputtering apparatus includes a susceptor for receiving a substrate, and a first target device disposed to be opposite to a center region of a substrate and at least second and third target devices disposed to be opposite to peripheral regions of the substrate, wherein the second and third target devices are rotatable.