Rotatable Throttle Valve for Large PEALD Cavity Pressure Control
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Solution Overview
Problem
In large dimension plasma enhanced atomic layer deposition cavities, existing throttle valve systems struggle to control pressure effectively, leading to inefficient gas flow and deposition rates, particularly in high volume cavities, resulting in prolonged gas spreading times and reduced switching speeds.
Innovation Solution
A rotatable throttle valve system is introduced within the exhaust pipe, controlled by a pneumatic valve frequency signal and pressure signals to manage gas flow, allowing for rapid gas exchange and pressure regulation, enhancing the deposition process by optimizing gas flow and precursor usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a traditional throttle valve is used to control pressure in a large dimension cavity, then the pressure control structure is simple, but the gas flow cannot be increased or decreased in a timely manner, resulting in slow response speed
Solution Approach 1:
The patent transforms the static throttle valve into a dynamic rotatable valve that can rapidly adjust its opening angle in response to control signals. The valve rotates between different angular positions to dynamically control gas flow rate, enabling fast response to pressure control requirements without complex mechanical structures
Solution Approach 2:
The patent changes the control parameter from linear valve opening distance to rotational angle. By controlling the rotation angle of the valve, the gas flow cross-sectional area is adjusted, providing a simple yet effective method to rapidly modulate gas flow rate and achieve fast pressure control in large cavities
2Productivity
If the cavity volume is large to accommodate large substrates, then the manufacturing capacity is improved, but the gas spreading time increases, reducing the deposition speed
Solution Approach 1:
The patent implements periodic purging cycles where the rotatable valve rapidly opens to allow purifying gas to enter the cavity, then closes to enable reaction. This periodic action creates multiple gas exchange cycles within the deposition process, ensuring fresh precursor gas reaches all areas of the large cavity efficiently without extending total processing time
Solution Approach 2:
The patent uses rapid valve opening and closing to rush purifying gas through the large cavity in short bursts. This allows the gas to quickly spread throughout the entire volume and reach remote areas, minimizing the time penalty associated with large cavity volume while maintaining uniform gas distribution
3Speed
If the rotatable valve rotates quickly to control gas flow rapidly, then the pressure control speed is improved, but the valve positioning precision may be compromised
Solution Approach 1:
The patent incorporates feedback control where the actual valve position is monitored and compared with the target position. The control system adjusts the rotation command based on the position deviation, ensuring precise valve positioning even during rapid rotation. This feedback mechanism maintains positioning accuracy while enabling fast response to pressure control demands
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables faster and more precise control of gas flow and pressure within the cavity, improving deposition rates and reducing precursor consumption, while minimizing nitrogen incorporation into the thin film, thus enhancing the overall efficiency and reliability of the plasma enhanced atomic layer deposition process.
Implementation Method 1
The plasma enhanced atomic layer deposition adopts a continuous bi-chemical reaction. The deposition of a chemical precursor will be self-limiting. Next, the ligand excision and the surface activation are processed by utilizing an ionic group and/or an atomic group produced from the plasma.
Implementation Method 2
The deposition of a chemical precursor will be self-limiting. The reaction is processed continuously until all of the surface functional group has been reacted and replaced. This is the self-limiting characteristic of the atomic layer deposition.
Implementation Method 3
Because the plasma needs to be operated in a specified pressure to absorb the RF power effectively and transfer the gas into plasma
Data Source
AI summary
An operating method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof are provided. The present invention reduces the time needed for filling the manufacturing gas into the large volume manufacturing cavity. Therefore, the plasma enhanced atomic layer deposition apparatus can switch the precursors rapidly to increase the thin film deposition rate, reduce the manufacturing gas consumption and lower the manufacturing cost.