3D Semiconductor Block Assembly Using Rotated Vertical Interconnects
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Solution Overview
Problem
Existing semiconductor manufacturing and packaging processes face challenges in producing smaller semiconductor devices with higher density and efficient electrical interconnection, which are essential for reducing power consumption and increasing performance.
Innovation Solution
A method involving the formation of conductive elements in a horizontal orientation over a carrier, followed by singulation and rotation to a vertical orientation, combined with support material to create 3D blocks, allowing for dense interconnects and vertical electrical interconnection, and the use of conductive traces with pitches as low as 20 μm.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional semiconductor manufacturing processes are used, then devices can be produced with current density and interconnection methods, but the devices cannot achieve higher density and smaller footprint required for reduced power consumption and increased performance
Solution Approach 1:
The patent applies dimensionality change by forming conductive elements in a horizontal orientation during manufacturing, then rotating the substrate 90 degrees to achieve vertical interconnection in the final device. This allows the manufacturing process to exploit horizontal fabrication advantages while the final device achieves vertical compactness and higher density, effectively using two different spatial dimensions for manufacturing versus operation.
Solution Approach 2:
The patent inverts the conventional approach by first creating horizontal conductive elements and support structures, then rotating the entire assembly 90 degrees to achieve vertical orientation. This inversion allows the manufacturing process to work with horizontal geometries (which are easier to fabricate with standard tools) while the final product achieves vertical compactness for higher density.
2Area of moving object
If device size is reduced to achieve smaller footprint, then power consumption decreases and performance increases, but manufacturing precision and electrical interconnection efficiency become more difficult to maintain
Solution Approach 1:
By using horizontal conductive element formation during manufacturing followed by 90-degree rotation to achieve vertical interconnection, the patent enables smaller device footprints while maintaining manufacturing precision. The horizontal manufacturing stage benefits from standard fabrication capabilities, and the vertical final configuration achieves compact footprint without sacrificing interconnection precision.
3Productivity
If vertical electrical interconnection is implemented to achieve higher density, then device performance increases, but conventional horizontal manufacturing processes become less efficient
Solution Approach 1:
The patent resolves this contradiction by separating the manufacturing stage (horizontal) from the operational stage (vertical). During manufacturing, conductive elements are formed horizontally using conventional efficient processes. After assembly, the substrate is rotated 90 degrees to achieve vertical interconnection for high performance. This dimensional transformation allows both horizontal manufacturing efficiency and vertical operational performance to coexist.
Solution Approach 2:
The patent applies preliminary action by forming horizontal conductive elements and support structures during the manufacturing phase, before the 90-degree rotation to vertical orientation. This preliminary horizontal configuration allows standard manufacturing tools to work efficiently, and the subsequent rotation transforms these pre-formed structures into the vertical configuration needed for high-performance operation.
Data Source
AI summary
A method of making an assembly or package comprising 3D blocks may include forming a conductive element horizontally oriented over a first carrier, forming support material around the conductive element, and singulating the conductive element and the support material to form a plurality of 3D blocks. The method may further include rotating each of the plurality of 3D blocks and mounting the plurality of 3D blocks over a second carrier with the conductive traces of the 3D blocks vertically oriented to form a vertically oriented conductive element. A plurality of components may be disposed laterally offset from each of the plurality of 3D blocks, an encapsulant may be disposed thereover s to form a reconstituted panel that may be singulated to form a plurality of individual assemblies.