Rotating Substrate ALD Chamber Layout to Prevent Gas Mixing
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Solution Overview
Problem
The atomic layer deposition (ALD) process is limited by slower deposition speeds compared to chemical vapor deposition (CVD) and inefficiencies in gas purging, leading to incomplete film formation and potential mixing of source and reactant gases, which affects the quality and speed of thin film formation on substrates.
Innovation Solution
A substrate processing apparatus with a chamber design that separates source and reactant gas spaces using a purge gas distribution unit, allowing for sequential and plasma-activated gas distribution to prevent mixing and ensure complete purging, thereby forming a pure ALD thin film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the ALD process is used to form a thin film on a substrate, then the film quality and uniformity are improved, but the deposition speed is reduced
Solution Approach 1:
The process chamber is divided into three distinct regions: a source gas supply region, a reactant gas supply region, and a purge gas supply region. This spatial segmentation allows sequential processing steps to occur simultaneously in different zones, enabling faster cycling while maintaining pure ALD film quality through prevented gas mixing.
Solution Approach 2:
The patent implements periodic action by sequentially supplying source gas and reactant gas in alternating cycles to different regions of the substrate. This periodic supply pattern enables rapid deposition cycling while the purge gas continuously removes residual gases, maintaining ALD process purity without sacrificing speed.
2Productivity
If the source gas and reactant gas are quickly supplied and purged in sequence, then the processing speed is improved, but the gases may not be completely discharged leading to mixing and CVD film formation
Solution Approach 1:
The process chamber is divided into three distinct regions: a source gas supply region, a reactant gas supply region, and a purge gas supply region. This spatial segmentation allows sequential processing steps to occur simultaneously in different zones, enabling faster cycling while maintaining pure ALD film quality through prevented gas mixing.
Solution Approach 2:
The purge gas acts as an intermediary substance that rapidly removes residual source gas and reactant gas from the process chamber between deposition cycles. By introducing this intermediate purging step with dedicated gas distribution, the system achieves fast cycling speeds while ensuring complete gas discharge and preventing unwanted gas mixing that would lead to CVD film formation.
3Loss of time
If a purge gas is supplied to quickly discharge residual gases, then the processing time is reduced, but the purge gas must effectively separate source and reactant gas spaces
Solution Approach 1:
The process chamber is divided into three distinct regions: a source gas supply region, a reactant gas supply region, and a purge gas supply region. This spatial segmentation allows sequential processing steps to occur simultaneously in different zones, enabling faster cycling while maintaining pure ALD film quality through prevented gas mixing.
Solution Approach 2:
The purge gas distribution unit serves multiple functions: it rapidly removes residual gases from the chamber, acts as a physical barrier preventing mixing between source and reactant gas regions, and enables fast processing cycles. This multi-functional design achieves effective gas separation and rapid purging without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the speed and quality of thin film deposition by preventing gas mixing and ensuring complete purging, resulting in a densified and pure ALD film with improved film quality and reduced processing time.
Implementation Method 1
The source gas may be adsorbed onto the surface of the substrate by supplying the source gas to the substrate first
Implementation Method 2
by supplying the reactant gas to the substrate, the reactant gas may react with the source gas adsorbed onto the surface of the substrate
Implementation Method 3
the other source gas may be removed by using a purge gas
Data Source
AI summary
The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.