Rotating Semi-Batch ALD Device with Sector Segmentation
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Solution Overview
Problem
Current atomic layer deposition (ALD) technologies face challenges with low productivity, high particle contamination, and high gas consumption, particularly in rotating semi-batch ALD devices, which affect the throughput and step coverage in semiconductor, LED, and solar cell manufacturing.
Innovation Solution
The implementation of a rotating semi-batch ALD device with a vacuum container, a rotating susceptor, sector-shaped reaction gas supply means, and independent vacuum evacuation systems, along with a shower plate and partition walls for uniform gas distribution and separation, enhances productivity and step coverage while reducing gas consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional single-substrate ALD equipment is used, then high deposition quality is achieved, but productivity is low with throughput of about 20 WPH or less
Solution Approach 1:
The vacuum container is divided into multiple sector-shaped reaction gas supply regions, each equipped with independent gas supply and vacuum evacuation systems. This segmentation allows multiple substrates to be processed simultaneously in different sectors, increasing throughput while maintaining the quality standards of conventional ALD processes.
Solution Approach 2:
Multiple ALD process chambers are merged into a single rotating susceptor system within one vacuum container. The rotating susceptor carries multiple substrates that rotate through different gas supply sectors, combining the functionality of multiple chambers into one integrated system that achieves both high throughput and deposition quality.
2Productivity
If batch furnace ALD equipment is used, then high productivity is achieved, but particle contamination increases due to incomplete gas replacement
Solution Approach 1:
The vacuum container is divided into multiple sector-shaped regions with independent gas supply and evacuation systems. Each sector can be evacuated and filled independently, ensuring complete gas replacement in each region without the particle contamination issues that occur in large batch furnaces where gas replacement is incomplete.
Solution Approach 2:
The susceptor rotates periodically, bringing substrates sequentially through different gas supply sectors. This periodic rotation ensures that each substrate receives complete gas replacement and exposure to reaction gases in a controlled manner, preventing particle contamination while maintaining high productivity.
3Productivity
If rotating semi-batch ALD device is used, then productivity is improved, but gas consumption increases
Solution Approach 1:
The vacuum container is divided into multiple sector-shaped regions, each with its own gas supply and evacuation system. This segmentation allows gas to be supplied only to active reaction sectors rather than the entire chamber, reducing overall gas consumption while maintaining high throughput through parallel processing in multiple sectors.
Solution Approach 2:
The system is designed to evacuate and reuse reaction gases from completed sectors. By recovering and reusing gases that have completed their reaction cycle, the system reduces overall gas consumption while maintaining continuous high-speed processing across multiple sectors.
4Manufacturing precision
If gas supply means are positioned close to substrates, then step coverage is improved, but gas mixing between different reaction gases increases causing particle generation
Solution Approach 1:
The vacuum container is divided into separate sector-shaped regions for different reaction gases, with physical separation between sectors. This segmentation prevents gas mixing between different reaction gases while allowing each gas to be positioned close to substrates in its own sector, maintaining good step coverage without particle generation from gas mixing.
Solution Approach 2:
The rotating susceptor sequentially exposes substrates to different gas sectors in a controlled periodic manner. During rotation, substrates are exposed to one reaction gas at a time in separate sectors, preventing gas mixing. The periodic rotation ensures that substrates receive proper exposure to each gas sequentially, maintaining step coverage while avoiding particle contamination.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves high throughput, low particle generation, and high step coverage with reduced gas consumption, improving the efficiency and reliability of ALD processes for semiconductor, LED, and solar cell production.
Implementation Method 1
a shower plate and partition walls for uniform gas distribution
Implementation Method 2
a rotating susceptor, sector-shaped reaction gas supply means
Implementation Method 3
independent vacuum evacuation systems
Implementation Method 4
partition walls for uniform gas distribution and separation
Implementation Method 5
atomic layer deposition (ALD) device and a process thereof for achieving high-quality deposition
Data Source
AI summary
The present invention provides a rotating semi-batch ALD device and process which ensure high productivity, minimal particle formation, low gas consumption and high coverage during the production of semiconductors, liquid crystals, LEDs and/or solar cells. The rotating semi-batch ALD device and ALD process are characterized in that: a reaction gas supply means is configured from a shower plate for evenly discharging gas, a cavity for allowing gas to flow down gradually, and a partition wall surrounding the shower plate and the cavity; and a purge gas supply means is configured from a shower plate that causes gas to flow evenly at a high flow velocity in the transverse direction in the narrow gap between the purge gas supply means and substrates being treated.