Rotating Deposition Head for Atomic Layer Thickness Control
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Solution Overview
Problem
Existing atomic layer deposition methods are inefficient for depositing layers thicker than 10 nanometers due to the time-consuming process of stacking numerous atomic layers, and they often suffer from precursor gas leakage and uneven deposition, especially when dealing with substrates of varying sizes and shapes.
Innovation Solution
A method and apparatus that involve a deposition head with a precursor-gas supply rotating along a substrate, where the precursor gas is supplied and interrupted in a controlled manner to prevent leakage and ensure continuous, even deposition, allowing for the deposition of a stack of atomic layers while moving the substrate or deposition head in a continuous motion, and using a bearing gas to maintain a narrow separation distance and prevent mechanical contact.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If atomic layer deposition is used to deposit layers thicker than 10 nanometers by stacking numerous atomic layers, then layer thickness control precision is maintained, but deposition time increases significantly
Solution Approach 1:
The deposition head is rotated continuously during the deposition process, enabling dynamic movement of the precursor gas supply along the substrate. This continuous rotation allows multiple atomic layers to be deposited in a single pass, significantly increasing the deposition rate while maintaining precise thickness control through controlled rotation speed and precursor gas flow
Solution Approach 2:
The method enables continuous deposition of multiple atomic layers by maintaining continuous rotation of the deposition head and continuous supply of precursor gas. This eliminates the need to stop and restart the deposition process for each layer, achieving continuous useful action that大幅提高 deposition efficiency while preserving layer thickness precision
2Productivity
If the substrate is rotated rapidly along the nozzle to deposit multiple layers in short time, then deposition time is reduced, but substrate mounting time may undo the time gained and the method is limited to substrates with length equal to or smaller than drum circumference
Solution Approach 1:
Instead of rotating the substrate along a stationary or slowly moving nozzle, the invention inverts the approach by rotating the deposition head (with the nozzle) along the substrate. This inversion simplifies the mounting process as the substrate can remain stationary or move linearly through the rotating deposition head, eliminating the need for complex substrate mounting to rotating drums while achieving high deposition speeds
Solution Approach 2:
The deposition head is segmented into multiple precursor gas supplies arranged along the rotation trajectory, allowing different regions of the substrate to receive precursor gas at different times during rotation. This segmentation enables the deposition head to handle substrates of various sizes and shapes without requiring substrate rotation, simplifying the overall system complexity
3Productivity
If the deposition head rotates continuously along the substrate, then deposition rate increases, but precursor gas may leak away to the outer environment
Solution Approach 1:
The precursor gas supply is activated periodically in sync with the rotation of the deposition head, being supplied only during the portion of the rotation where the nozzle is positioned over the substrate. This periodic action ensures that precursor gas is delivered precisely when needed for deposition while preventing leakage to the outer environment during other portions of the rotation cycle
Solution Approach 2:
A sealing element is introduced as an intermediary between the rotating deposition head and the stationary environment. This sealing element prevents precursor gas from leaking away during rotation while allowing the continuous rotational motion needed for high deposition rates, effectively mediating between the moving deposition head and the stationary external environment
4Area of stationary object
If reciprocating motion is used to move the substrate or deposition head, then coverage area is increased, but back-turning creates seams and reduces deposition uniformity
Solution Approach 1:
Instead of moving the substrate back and forth under a stationary deposition head, the invention inverts the motion by rotating the deposition head along the substrate in one continuous direction. This inversion eliminates the back-turning motion that creates seams, allowing the entire substrate surface to be covered uniformly as the deposition head rotates past different regions sequentially without reversing direction
Solution Approach 2:
The continuous rotation of the deposition head provides dynamic, smooth motion along the substrate surface, eliminating the abrupt stops and reversals of reciprocating motion. This dynamic continuous motion ensures uniform deposition across the entire substrate area without creating seams or variations at turning points, while still achieving comprehensive coverage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly increases the deposition rate, prevents precursor gas leakage, and ensures a more even and homogeneous layer deposition, reducing production time and costs while maintaining the high precision of atomic layer thickness control.
Implementation Method 1
having the precursor gas react near, e.g. on, the substrate so as to form an atomic layer
Implementation Method 2
moving the precursor-gas supply along the substrate by rotating the deposition head along a rotation trajectory
Implementation Method 3
using a bearing gas to maintain a narrow separation distance and prevent mechanical contact
Data Source
Figure 1
Figure 1A~1B
Figure 1C
AI summary
Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.