Rotating Diode Assembly Overvoltage Protection Circuit

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Solution Overview

Problem

Conventional wound field synchronous generator systems face overvoltage stress and electrostatic charge accumulation issues, leading to failure of the rotating diode assembly during engine start and rotor operation.

Innovation Solution

Incorporation of a rotating rectifier assembly with a field effect transistor (FET) and an over-voltage protection circuit, including a zener diode and reference resistor or capacitor, to control voltage across the rotating diode assembly and dissipate excessive power during over-voltage events, utilizing silicon carbide (SiC) FETs for high-temperature and high-voltage operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional rotating diode assembly is used in a wound field synchronous generator, then the generator can operate during engine start and rotor operation, but the rotating diode assembly is subject to overvoltage stress and electrostatic discharge that lead to failure

Engineering Contradiction:
Improverotating diode assembly reliabilityVSAvoidovervoltage stress and electrostatic discharge
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A field effect transistor (FET) is introduced as an intermediary protective device between the voltage rectifier circuit and the rotating diode assembly. The FET acts as a controlled switch that can rapidly respond to overvoltage conditions and divert excess voltage away from the rotating diodes, preventing damage while allowing normal operation to continue

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The protection circuit includes voltage detection circuitry that continuously monitors the voltage across the rotating diode assembly and takes preventive action before damage occurs. When voltage exceeds a predetermined threshold, the circuit activates the FET to clamp the voltage, preventing the harmful overvoltage stress and electrostatic discharge from reaching levels that would cause diode failure

Inventive Principle:
Principle #9Preliminary anti-action

2Reliability

If overvoltage protection circuitry is added to protect the rotating diode assembly, then reliability improves, but device complexity increases

Engineering Contradiction:
Improverotating diode assembly protectionVSAvoidrotating rectifier assembly complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The field effect transistor serves multiple functions within the rotating rectifier assembly: it acts as a protective switch for overvoltage conditions, functions as a controllable element for voltage regulation, and integrates with the existing diode assembly structure. This multi-functionality reduces the need for separate dedicated protection components, thereby limiting the increase in overall device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The protection circuit components (FET, voltage detection circuitry, reference voltage source) are integrated into the existing rotating rectifier assembly structure rather than being added as separate external components. The FET is combined with the diode assembly in a single rotating unit, and the control circuitry is merged with the rectifier circuit, reducing structural complexity compared to a separate protection system

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Effectively protects the rotating diode assembly from overvoltage and electrostatic discharge, preventing failure and ensuring reliable operation under high-stress conditions.

Implementation Method 1

a field effect transistor (FET) to control voltage across the rotating diode assembly

Methodology Applied
Scientific EffectField effect transistor voltage control:

Implementation Method 2

including a zener diode and reference resistor or capacitor, to control voltage across the rotating diode assembly

Methodology Applied
Scientific EffectZener breakdown:

Implementation Method 3

utilizing silicon carbide (SiC) FETs for high-temperature and high-voltage operation

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Data Source

PatentUS8941341B2Rotating diode assembly including overvoltage protection circuit
Publication Date: 2015.01.27 HAMILTON SUNDSTRAND CORP
  • US8941341B2 patent drawing
  • US8941341B2 patent drawing
  • US8941341B2 patent drawing

AI summary

A brushless wound field synchronous generator configured to generate an output power to drive an electrical load includes a rotating rectifier assembly. The rotating rectifier assembly includes a rotating diode assembly and a field effect transistor (FET) to control voltage across the rotating diode assembly.