Semiconductor Edge Structure Etching with Tangential Jet Rotation
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Solution Overview
Problem
Existing methods for producing edge structures of semiconductor components are costly and lack reproducibility, with challenges in achieving high dielectric strength and stability in electrical properties due to process instability and the need for multiple complex steps.
Innovation Solution
A method involving the use of a chemical etchant jet with a predetermined jet cross section, applied tangentially to the edge face of a rotating semiconductor body, allowing for precise control and automation of the etching process to produce a predetermined edge contour with high accuracy and reproducibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional mechanical chamfering and chemical polishing methods are used, then edge structure can be produced, but manufacturing cost increases and process stability decreases
Solution Approach 1:
The patent combines mechanical chamfering and chemical polishing into a single integrated working step. The semiconductor body is chamfered mechanically and simultaneously polished chemically in one process, eliminating the need for separate sequential steps. This merging reduces process complexity while maintaining the precision benefits of both methods.
Solution Approach 2:
The mechanical chamfering is performed as a preliminary action before chemical polishing, with the chamfered surface specifically prepared to optimize the subsequent chemical polishing effect. The preliminary mechanical preparation creates ideal conditions for the chemical process, ensuring high precision edge structure production in the combined step.
2Manufacturing precision
If mask protection is applied to non-etching regions, then etching accuracy improves, but manufacturing cost and process complexity increase
Solution Approach 1:
The chemical etching solution is applied selectively only to the edge region that requires etching, rather than applying it universally and requiring mask protection. This localized application of etching chemistry achieves high etching accuracy without the need for masks, thereby reducing manufacturing cost and process complexity.
Solution Approach 2:
The patent extracts and removes the mask-related components from the process. By designing the etching application method to inherently target only the required regions, the need for mask materials, mask application steps, and mask removal steps is completely eliminated, simplifying the manufacturing process.
3Adaptability or versatility
If manual spin etching is used, then flexibility is maintained, but process stability and reproducibility deteriorate
Solution Approach 1:
The patent replaces manual mechanical spin etching with an automated etching application system. The automated system applies the chemical etching solution with precise control, eliminating human influence and mechanical variability. This substitution maintains the ability to adapt to different edge structure requirements while significantly improving process stability and reproducibility through automation.
4Productivity
If dip etching method is used for chemical polishing, then processing speed increases, but process stability decreases due to acid contamination
Solution Approach 1:
The patent extracts and removes the source of acid contamination from the process. By using a controlled chemical polishing method that does not rely on acid-based dip etching, the harmful contamination is eliminated while maintaining efficient processing speeds. This approach preserves productivity without compromising process stability.
Solution Approach 2:
The patent employs a controlled chemical polishing approach where the chemical etching solution is applied in a controlled manner and can be easily removed or replaced. This disposable-like approach to the etching chemistry ensures that contamination is minimized and process stability is maintained, while still achieving high processing speeds.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the economical and efficient production of semiconductor components with high accuracy and reproducibility, ensuring stable electrical properties and reducing the number of necessary working steps, thereby lowering manufacturing costs and increasing yield.
Implementation Method 1
etching a predetermined edge contour by purposely applying a chemical etchant onto the edge face by means of an etchant jet with simultaneous rotation of the semiconductor body
Data Source
AI summary
A method for producing an edge structure of a semiconductor component includes: providing a semiconductor body having at least two mutually spaced-apart main faces respectively having an edge, between which edges an edge face extends; and etching a predetermined edge contour by purposely applying a chemical etchant onto the edge face by an etchant jet with simultaneous rotation of the semiconductor body about a rotation axis. The etchant jet is guided with a predetermined jet cross section, while being directed tangentially with respect to the edge face, such that the etchant jet impinges on the edge face only with a part of the jet cross section. A corresponding device for producing an edge structure of a semiconductor component is also described.