Rotating Gas Injector Layout for Arcing-Resistant PVD Deposition

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Solution Overview

Problem

Arcing between plasma and substrate or chamber components in PVD processes leads to substrate damage and yield loss, and existing interruption mechanisms reduce yields and incur additional costs.

Innovation Solution

A magnetic-controlled reactive sputter system with a gas injector that provides controlled gas flow and directionality, using actuators to adjust the angle and rotation of the gas injector in real-time to prevent arcing and enhance plasma density and deposition efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a mechanism to interrupt the PVD process when arcing is detected is implemented, then substrate damage and defect contamination are reduced, but wafer yields decrease and manufacturing costs increase

Engineering Contradiction:
Improvesubstrate qualityVSAvoidwafer yield
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The gas injector is positioned to deliver gas directly to the target surface before arcing can occur, preventing the harmful discharge from forming in the first place. This preliminary protective action eliminates the need for interrupting the process while maintaining substrate quality.

Inventive Principle:
Principle #9Preliminary anti-action

Solution Approach 2:

A gas stream is introduced as an intermediary substance between the plasma and target to prevent direct arcing. The gas acts as a mediator that suppresses electron accumulation and prevents discharge formation, allowing continuous operation without compromising substrate integrity.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If gas flow rate is increased to prevent arcing, then arcing incidents are reduced, but plasma density and deposition efficiency may be affected

Engineering Contradiction:
Improvearcing preventionVSAvoiddeposition efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

Gas is delivered locally and directly to the target surface rather than uniformly throughout the chamber. This localized gas injection prevents arcing at the critical target region while maintaining optimal plasma conditions elsewhere, preserving deposition efficiency.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The system changes the local gas concentration parameter specifically at the target surface to prevent arcing, while maintaining overall plasma parameters that support efficient deposition. This selective parameter modification resolves the contradiction between arcing prevention and deposition efficiency.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Reduces arcing incidents, improves deposition quality, and enhances plasma density adjacent the substrate, leading to higher yields and reduced defects in the PVD process.

Implementation Method 1

A gas injector may be positioned to deliver a gas flow directly to a target surface in a PVD chamber

Methodology Applied
Scientific EffectGas flow:

Implementation Method 2

A conventional PVD process may include bombarding a target, which contains a source material to be deposited on the substrate, with ions from a plasma of an inert gas

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 3

This bombardment causes the source material to be sputtered from the target and deposited onto the substrate

Methodology Applied
Scientific EffectSputtering: Sputtering

Implementation Method 4

During the PVD process, a magnetron may be rotated near a backside of the target to facilitate sputtering

Methodology Applied
Scientific EffectMagnetic field: Magnetic Field

Data Source

PatentUS12486564B2Film forming apparatus and method for reducing arcing
Publication Date: 2025.12.02 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12486564B2 patent drawing
  • US12486564B2 patent drawing
  • US12486564B2 patent drawing

AI summary

Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.