Rotating Magnet Assembly for Uniform Wafer Plasma Density
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Solution Overview
Problem
The miniaturization and high integration of semiconductor devices have increased the sensitivity of plasma processes, leading to non-uniformity in plasma density-radius distribution, which affects the quality and yield of semiconductor products, particularly between the central and edge regions of a wafer.
Innovation Solution
A plasma processing apparatus with a magnet assembly that includes a plurality of first and second magnets arranged in an annular shape, allowing for controlled rotation to adjust the magnetic field-radius distribution, thereby uniformizing the plasma density-radius distribution and improving etching uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional plasma processing apparatus is used, then the plasma process can be performed, but the plasma density-radius distribution is non-uniform, affecting process uniformity between central and edge regions
Solution Approach 1:
The magnet assembly is designed to be rotatable, allowing the magnetic field configuration to be dynamically adjusted during plasma processing. This dynamic adjustment enables optimization of plasma density distribution across different radial positions, improving uniformity between central and edge regions of the wafer.
Solution Approach 2:
The invention changes the magnetic field parameters by introducing a rotatable magnet assembly with adjustable orientation. By varying the angular position of the magnets, the magnetic field strength and distribution can be tuned to achieve uniform plasma density across the wafer surface, directly addressing the non-uniformity problem.
2Device complexity
If the magnet assembly is made stationary, then the structure is simple, but the plasma density-radius distribution cannot be adjusted
Solution Approach 1:
The magnet assembly incorporates a rotation mechanism that allows the magnetic field configuration to be adjusted dynamically. This dynamic design provides adaptability for optimizing plasma density distribution while maintaining relative structural simplicity through a single degree of freedom rotation.
Solution Approach 2:
The rotatable magnet assembly serves multiple functions: it generates the magnetic field, adjusts the field distribution pattern, and enables optimization for different processing conditions. This multi-functionality reduces the need for additional separate adjustment mechanisms, balancing complexity and versatility.
3Manufacturing precision
If miniaturization and high integration are pursued, then semiconductor device performance improves, but the sensitivity to plasma process errors increases, affecting quality and yield
Solution Approach 1:
By adjusting the magnetic field parameters through rotation of the magnet assembly, the plasma density distribution can be optimized to provide more uniform processing conditions. This reduces the impact of local variations that become increasingly critical as device dimensions are miniaturized.
Solution Approach 2:
The rotatable magnet assembly enables iterative optimization of plasma density distribution. By adjusting the rotation angle and observing process results, the system can be tuned to achieve optimal uniformity, providing a feedback mechanism for improving process reliability in miniaturized device manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enhances the uniformity of plasma processing, improving the reliability and yield of semiconductor manufacturing by ensuring consistent plasma density across the wafer surface.
Implementation Method 1
a magnet assembly configured to apply a magnetic field into the chamber
Implementation Method 2
the magnet assembly is configured to rotate the plurality of first magnets and the plurality of second magnets in a first direction to set an intensity of the magnetic field at a central portion of the chamber to be greater than an intensity of the magnetic field in an edge portion of the chamber
Data Source
AI summary
A plasma processing apparatus includes a wafer support fixture in the chamber and configured to support a wafer, an upper electrode in the chamber and spaced apart from the wafter support fixture, a magnet assembly configured to apply a magnetic field into a chamber, the magnet assembly including a plurality of first magnets and a plurality of second magnets arranged in an annular shape, and a horizontal distance from a central axis of the chamber to each of the plurality of first magnets and each of the plurality of second magnets is less than a radius of the wafer.