Rotating Pallet Sputtering System for Uniform Deposition
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Solution Overview
Problem
Current sputtering systems for semiconductor wafers face inefficiencies due to the need for multiple single-wafer process chambers, leading to high equipment and processing costs, slow throughput, non-uniform deposition, poor temperature control, contamination, and non-uniform target erosion.
Innovation Solution
A multi-chamber batch processing system with a separate pre-clean chamber and sputtering chamber, utilizing a robotic arm for vacuum transfer, inductively coupled plasma for pre-cleaning, and oscillating magnets for uniform target erosion and deposition, along with advanced shielding and thermal management to prevent contamination and enhance deposition uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple single-wafer process chambers are used to deposit different materials, then material deposition capability is improved, but equipment cost and processing cost increase
Solution Approach 1:
The patent combines multiple single-wafer process chambers into a single multi-chamber batch processing system where multiple wafers are processed simultaneously. The system includes a pre-clean chamber, sputtering chamber, and annealing chamber that can handle multiple wafers at once, eliminating the need for separate single-wafer chambers for each material deposition step.
Solution Approach 2:
The batch processing system is designed to perform multiple functions within a single integrated platform. The same system can pre-clean wafers, deposit multiple materials through sputtering, and perform annealing, making it a universal processing system that replaces multiple specialized single-wafer chambers.
2Adaptability or versatility
If multiple single-wafer process chambers are used, then material deposition capability is improved, but system throughput decreases
Solution Approach 1:
The patent combines multiple single-wafer process chambers into a single multi-chamber batch processing system where multiple wafers are processed simultaneously. The system includes a pre-clean chamber, sputtering chamber, and annealing chamber that can handle multiple wafers at once, eliminating the need for separate single-wafer chambers for each material deposition step.
Solution Approach 2:
The batch processing system enables continuous processing of multiple wafers through all stages (pre-clean, sputtering, annealing) without breaking vacuum. Wafers are loaded in batches and processed continuously through each chamber, eliminating the repeated vacuum breaking and re-establishment required in sequential single-wafer processing.
3Object-affected harmful factors
If a robotic arm transfers wafers between chambers without breaking vacuum, then wafer contamination is reduced, but system complexity increases
Solution Approach 1:
The robotic arm and wafer transfer mechanism are nested within the vacuum environment of the multi-chamber system. The robot operates inside the vacuum chamber, transferring wafers between pre-clean, sputtering, and annealing chambers without breaking vacuum, thus preventing atmospheric contamination while maintaining a manageable system architecture.
4Productivity
If multiple targets concurrently deposit material on rotating pallet, then throughput increases, but deposition uniformity may worsen
Solution Approach 1:
The system employs a rotating pallet that dynamically positions multiple wafers in different locations within the sputtering chamber. The rotation allows each wafer to receive material from multiple targets at different angles and times, achieving uniform deposition across all wafers while maintaining concurrent processing of multiple materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This system increases throughput, reduces contamination, achieves uniform deposition, and improves target utilization, allowing for concurrent deposition of multiple materials on multiple wafers without breaking the vacuum, thus enhancing the efficiency and reliability of the sputtering process.
Implementation Method 1
Having a separate pre-clean chamber, such as an inductively coupled plasma (ICP) chamber
Implementation Method 2
inductively coupled plasma (ICP) chamber
Implementation Method 3
A sputtering system is widely used in the semiconductor manufacturing industry for depositing materials on semiconductor wafers. Sputtering is sometimes referred to as physical vapor deposition, or PVD.
Implementation Method 4
Sputtering is sometimes referred to as physical vapor deposition, or PVD
Implementation Method 5
Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate (0.5-10 second period) over its associated target for uniform target erosion and uniform deposition on the wafers
Implementation Method 6
a coolant running through the copper tubing controls the temperature of the wafers
Implementation Method 7
The aluminum is anodized (or another insulator is formed) to provide an insulating film on its surface. This prevents the pallet from being etched in the ICP chamber
Data Source
AI summary
A processing system is described for depositing materials on multiple workpieces (wafers, display panels, or any other workpieces) at a time in a vacuum chamber. Multiple targets, of the same or different materials, may concurrently deposit material on the wafers as the pallet is rotating. Multiple magnets (one for each target) in the magnetron assembly in the sputtering chamber oscillate back and forth across an arc over their respective targets for uniform target erosion and uniform deposition on the wafers.