Rotating Biasable Pedestal for Uniform CVD Gap Fill
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Solution Overview
Problem
Achieving high quality film deposition in chemical vapor deposition (CVD) gap fill processes is challenging due to smaller feature sizes in substrates, which requires improved substrate supports for enhanced gap fill and film uniformity.
Innovation Solution
The substrate supports incorporate a rotating biasable pedestal with a dielectric plate, RF rotary joint, and coolant union, enabling continuous wave or pulsed RF bias power and coolant distribution, along with a lift assembly for precise positioning, to facilitate improved film deposition in CVD process chambers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a stationary substrate support is used in CVD chamber, then the structure is simple and easy to manufacture, but the gap fill uniformity and film quality deteriorate due to smaller feature sizes
Solution Approach 1:
The substrate support is transformed from a stationary structure to a rotating structure. The pedestal rotates during CVD processing, creating dynamic plasma distribution that significantly improves gap fill uniformity in high aspect ratio features. This dynamic motion allows plasma to reach all areas of the substrate uniformly, solving the manufacturing precision problem while accepting increased structural complexity.
Solution Approach 2:
The rotating substrate support implements periodic action by continuously cycling through different positions during deposition. This periodic rotation creates time-varying plasma exposure that enhances film uniformity and quality, directly addressing the technical contradiction between simple structure and high manufacturing precision.
2Productivity
If RF bias power is applied to the substrate support, then the plasma enhancement and deposition rate improve, but the system complexity increases due to additional RF components
Solution Approach 1:
The substrate support system is designed with multi-functionality, integrating RF bias power application, rotation capability, and temperature control into a single unified structure. The pedestal serves multiple functions: it rotates the substrate, applies RF bias power through integrated electrodes, and controls temperature via coolant channels. This universality improves deposition rate through plasma enhancement while minimizing the increase in overall system complexity.
Solution Approach 2:
Multiple functions are merged into the substrate support structure: rotation mechanism, RF bias power application, and thermal management are combined in a single integrated pedestal assembly. This merging approach enables plasma-enhanced deposition with improved productivity while avoiding the need for separate, independent systems for each function.
3Manufacturing precision
If the substrate support rotates during deposition, then the plasma distribution and film uniformity improve, but the complexity of power and coolant delivery systems increases
Solution Approach 1:
The system incorporates feedback mechanisms through RF rotary joints that maintain continuous electrical connection during rotation, and coolant unions that ensure stable fluid delivery. These feedback-oriented connection systems allow the rotating pedestal to receive power and coolant without interruption or leakage, enabling improved film uniformity through rotation while managing the complexity of rotating power and fluid delivery.
Solution Approach 2:
RF rotary joints and coolant unions act as intermediary components that bridge the stationary power/coolant sources and the rotating pedestal. These intermediaries enable smooth power and fluid transfer during rotation, solving the technical contradiction by allowing film uniformity improvement through rotation while containing the complexity increase within specific intermediary components rather than the entire system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides enhanced gap fill for high aspect ratio features, uniformity, and high-density film quality by rotating and biasing the substrate supports within CVD chambers, ensuring efficient plasma-enhanced chemical vapor deposition processes.
Implementation Method 1
an RF bias power source coupled to the RF rotary joint and configured to provide radio frequency power to the dielectric plate
Implementation Method 2
ensuring efficient plasma-enhanced chemical vapor deposition processes
Data Source
AI summary
Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.