Rotating RF-Biased Pedestal for Uniform CVD Gap Fill
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Solution Overview
Problem
Achieving high quality film deposition in chemical vapor deposition (CVD) gap fill processes is challenging, especially for smaller feature sizes due to difficulties in achieving uniformity and high aspect ratio gap fill in semiconductor substrates.
Innovation Solution
The development of substrate supports with rotating biasable pedestals in CVD process chambers, incorporating RF rotary joints for continuous wave or pulsed RF bias power, insulator tubes for RF conduit insulation, and ground tubes for grounding, which enhance gap fill uniformity and film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional substrate supports are used in CVD gap fill processes, then the process can be performed, but high quality film deposition is difficult to achieve especially for smaller feature sizes
Solution Approach 1:
The substrate support incorporates a rotating pedestal that can dynamically change orientation during the CVD process. This rotation allows the substrate to be repositioned relative to the showerhead, enabling uniform deposition across smaller feature sizes and improving gap fill quality for high aspect ratio structures.
Solution Approach 2:
The system applies RF bias power to the substrate support, changing the electrical parameters of the deposition process. This RF bias modification alters the plasma distribution and ion bombardment characteristics, enabling high quality film deposition that works effectively for smaller feature sizes and high aspect ratio features.
2Manufacturing precision
If RF bias power is applied to enhance gap fill capabilities, then film quality improves, but the system complexity increases with additional RF rotary joints and insulation components
Solution Approach 1:
The RF rotary joint assembly is nested within the pedestal structure, with the insulator tube integrated into the existing support framework. The ground tube is positioned concentrically around the RF conduit, creating a compact nested arrangement that minimizes space requirements and reduces overall system complexity despite adding RF bias functionality.
Solution Approach 2:
An insulator tube is introduced as an intermediary component between the RF conduit and the grounded pedestal body. This insulator mediates the electrical connection, allowing RF bias power to be applied to the substrate while maintaining proper electrical isolation and grounding, thus enabling enhanced gap fill without compromising system integrity.
3Reliability
If the insulator tube extends vertically above the ground tube, then RF insulation is improved, but the pedestal height increases
Solution Approach 1:
The insulator tube extends vertically above the ground tube only in the specific region where RF insulation is most critical - around the RF conduit penetration point. This localized extension provides enhanced insulation effectiveness at the point of highest electrical stress while minimizing the overall height increase of the pedestal structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides enhanced gap fill capabilities, uniformity, and high-density film quality for high aspect ratio features by applying RF bias power to the substrate supports, improving the overall performance of CVD processes.
Implementation Method 1
an RF rotary joint coupled to the pedestal and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body
Implementation Method 2
an insulator tube disposed about the RF conduit to insulate the RF conduit
Implementation Method 3
a ground tube disposed about the insulator tube extending from the RF rotary joint towards the pedestal
Implementation Method 4
a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body
Data Source
AI summary
Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; an RF rotary joint coupled to the pedestal and having a RF connector; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal; an insulator tube disposed about the RF conduit; and a ground tube disposed about the insulator tube and extending from the RF rotary joint to the pedestal, wherein the insulator tube extends vertically above an upper surface of the ground tube.