Rotating Substrate Sputtering for Uniform Multi-Substrate Film Deposition
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Solution Overview
Problem
Existing film forming processes in semiconductor manufacturing face challenges in achieving both high productivity and good controllability, particularly in sputtering film formation, with conventional methods either prioritizing one over the other or leading to increased costs and particle generation.
Innovation Solution
A film forming apparatus and method that incorporates a rotating and revolving mechanism for substrates, combined with a sputtered particle emitting mechanism, allowing for synchronized oscillation of magnets and substrate revolution to ensure uniform film thickness and enable simultaneous sputtering and reaction treatments on multiple substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional sputtering film formation is performed on multiple substrates, then productivity increases, but film thickness uniformity deteriorates
Solution Approach 1:
The patent combines sputtering film formation and reaction treatment (oxidation or nitridation) into a single integrated processing container. Multiple substrates are processed simultaneously through combined sputtering and reaction treatments without requiring transfer between separate containers, achieving both high productivity and uniform film thickness control.
Solution Approach 2:
The substrate holder rotates during the film formation process, dynamically moving substrates through different zones (sputtering zone and reaction treatment zone). This rotation ensures uniform exposure to sputtered particles and reaction gases, improving film thickness uniformity while processing multiple substrates concurrently.
2Manufacturing precision
If separate processing containers are used for sputtering and reaction treatment, then manufacturing precision is maintained, but productivity decreases
Solution Approach 1:
The patent merges sputtering film formation and reaction treatment processes into a single processing container with multiple targets and gas supply systems. Substrates undergo both sputtering and reaction treatments in sequence within the same container, eliminating transfer time and improving productivity while maintaining film quality through controlled process parameters.
Solution Approach 2:
The processing system enables continuous operation by performing sputtering and reaction treatments back-to-back in the same processing container without substrate removal or transfer. The substrate holder rotates continuously, exposing substrates to sputtered particles and then reaction gases in an uninterrupted sequence, maximizing equipment utilization and productivity.
3Productivity
If multiple substrates are processed simultaneously, then productivity increases, but process controllability deteriorates
Solution Approach 1:
The rotating substrate holder dynamically positions multiple substrates in different zones during processing. This rotation ensures that all substrates receive equivalent exposure to sputtered particles and reaction gases over time, achieving uniform film properties across all substrates while maintaining batch processing efficiency.
Solution Approach 2:
The system controls film formation by adjusting parameters such as radio frequency power, gas flow rates, and processing pressure. These parameter changes are applied uniformly to all substrates during batch processing, ensuring consistent film quality while maintaining high productivity through simultaneous multi-substrate treatment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves high productivity and good controllability by ensuring uniform film deposition and reducing particle generation, while allowing for efficient manufacturing of laminated films like SiO2/SiN without the need for substrate transfer between processing containers.
Implementation Method 1
a sputtering film forming apparatus which emits sputtered particles from a target and deposits the sputtered particles on a substrate
Data Source
AI summary
A film forming apparatus comprising: a processing container for accommodating a plurality of substrates, a substrate holder provided in the processing container and configured to hold the substrates such that the plurality of substrates are arranged along a circumferential direction; a rotating and revolving mechanism configured to rotate the plurality of substrates on the substrate holder and revolve the plurality of substrates on the substrate holder along the circumferential direction; and a sputtered particle emitting mechanism configured to emit sputtered particles to the plurality of substrates held by the substrate holder. Sputtering film formation is performed by emitting the sputtered particles from the sputtered particle emitting mechanism while rotating and revolving the plurality of substrates held by the substrate holder using the rotating and revolving mechanism.