Roughened Die Sidewalls for Stronger Semiconductor Capping Adhesion

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Solution Overview

Problem

The semiconductor industry faces challenges in improving the bonding processes for stacked semiconductor devices, which affect the physical and electrical integration density, leading to issues with adhesion and delamination of capping members on die structures.

Innovation Solution

A semiconductor structure is developed with a roughened sidewall on the die substrate, covered by a capping member with complementary recesses and protrusions, enhancing adhesion and minimizing delamination, and a method involving forming recesses on the sidewall and using a multilayer polymeric capping member to improve the structural integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a smooth sidewall is used on the die structure, then the manufacturing process is simpler, but the adhesion between the die structure and the capping member is insufficient

Engineering Contradiction:

Improveadhesion between die structure and capping memberVSAvoidcomplexity of sidewall structure

Core Design Contradiction:

StrengthVSDevice complexity

Solution Approach 1:

The sidewall of the die structure is pre-treated to create a roughened surface with recesses before applying the capping member. This preliminary surface modification increases the surface area and creates mechanical interlocking features that enhance adhesion between the die structure and the capping member, preventing delamination during subsequent processing and operation.

Inventive Principle:

Principle #10Preliminary action

2Quantity of substance

If the minimum feature size is reduced to increase integration density, then more components can be integrated, but the bonding process becomes more difficult and adhesion decreases

Engineering Contradiction:

Improveintegration density of semiconductor componentsVSAvoidbonding process reliability

Core Design Contradiction:

Quantity of substanceVSReliability

Solution Approach 1:

Before bonding the capping member to the die structure, the sidewall surface is pre-modified to create a roughened topology. This preliminary action ensures that even as feature sizes are reduced to increase integration density, the bonding interface maintains sufficient mechanical interlocking and adhesion strength, thereby preserving bonding process reliability at smaller scales.

Inventive Principle:

Principle #10Preliminary action

3Stability of the object's composition

If a capping member is applied to protect the die structure, then the structural integrity is improved, but delamination occurs due to insufficient adhesion

Engineering Contradiction:

Improvestructural integrity of die structureVSAvoidbonding reliability between die structure and capping member

Core Design Contradiction:

Stability of the object's compositionVSReliability

Solution Approach 1:

The sidewall of the die structure undergoes preliminary surface treatment to create a roughened morphology with recesses before the capping member is applied. This pre-modification of the bonding surface enhances mechanical interlocking and increases adhesion strength, ensuring that the capping member remains firmly attached and preventing delamination while maintaining structural integrity.

Inventive Principle:

Principle #10Preliminary action

Data Source

PatentUS20240063272A1Semiconductor structure with roughened sidewall and method of manufacturing thereof

Publication Date: 2024.02.22 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A semiconductor structure includes a die structure including: a substrate having a sidewall; a dielectric disposed over the substrate; an interconnect structure disposed within the dielectric; and a capping member surrounding the die structure, wherein the sidewall of the substrate includes a plurality of recesses extending into the substrate, and each of the plurality of recesses surrounds at least a portion of the capping member.