Rounded Conductor Corners Reduce Leakage Current in Semiconductor Devices
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Solution Overview
Problem
Transistors with metal oxide semiconductor layers face issues with leakage current due to variations in insulating film thickness and electric field concentration at conductor corners, leading to unstable electrical characteristics and reliability concerns.
Innovation Solution
A semiconductor device design where the insulating film thickness over conductor corners is equal to that over other portions, with rounded corner shapes and specific angle configurations to minimize leakage current, achieved through a manufacturing method involving precise etching and masking techniques to form island-shaped semiconductor layers and conductors with rounded corners.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional transistors are formed with sharp-cornered conductors, then manufacturing is simpler, but leakage current increases due to electric field concentration at corners
Solution Approach 1:
The patent applies curvature by rounding the corners of conductor patterns (source and drain electrodes) instead of using sharp corners. This curvature eliminates electric field concentration at corner points, thereby reducing leakage current between conductors while maintaining manufacturing feasibility through standard photolithography processes.
2Reliability
If insulating film thickness varies at conductor corners, then manufacturing is easier, but electrical characteristics become unstable
Solution Approach 1:
By rounding conductor corners, the patent ensures that the insulating film can be deposited with uniform thickness across the entire conductor surface, including corners. The curved geometry eliminates the thickness variation that occurs at sharp corners, providing stable electrical characteristics.
3Reliability
If rounded corners are implemented, then leakage current is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent introduces a specific parameter for corner rounding radius (R1) that balances leakage current reduction with manufacturing feasibility. By optimizing this geometric parameter, the patent achieves effective electric field distribution improvement while maintaining compatibility with standard photolithography manufacturing processes.
Data Source
AI summary
A semiconductor device including a transistor having low leakage current between the drain and the gate is provided. The semiconductor device includes an insulating film provided so as to cover a corner of the first conductor and a second conductor provided so as to overlap with a corner of the first conductor with the insulating film provided therebetween. Variation in the thickness of the insulating film can be prevented by making the first conductor have a rounded corner. Furthermore, concentration of electric field due to the corner of the first conductor can be relaxed. Thus, the current leakage between the first conductor and the second conductor can be reduced.