Rounded Deposition Head for Continuous Atomic Layer Deposition
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional atomic layer deposition (ALD) processes are limited by slow processing times and are confined to substrates of a limited size, making them inefficient for industrial applications, especially when trying to deposit layers thicker than 10 nanometers, and existing roll-to-roll (R2R) methods either restrict substrate size or increase the risk of substrate damage.
Innovation Solution
A method and apparatus for ALD that uses a deposition head with a substantially rounded output face to guide a flexible substrate along a curved path, employing a gas bearing and pressure-based pulling units to maintain contactless interaction, allowing for continuous movement and increased substrate length exposure to the precursor gas, thereby enhancing efficiency and flexibility in design.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional atomic layer deposition processes are used to deposit layers thicker than 10 nanometers, then the desired layer thickness is achieved, but the processing time becomes excessively long
Solution Approach 1:
The deposition process is divided into multiple passes where the deposition head moves back and forth across the substrate, depositing a portion of the required layer thickness in each pass. This segmentation allows thick layers to be built up efficiently without requiring excessively long continuous exposure times, thereby maintaining precision while improving productivity.
Solution Approach 2:
The system transitions from a static deposition approach to a dynamic one where the deposition head moves continuously across the substrate during deposition. This dynamic approach enables faster processing by exposing different areas of the substrate to the precursor gas in sequence, significantly reducing the total processing time for thick layers while maintaining uniform thickness control.
2Productivity
If roll-to-roll methods are used to increase substrate length exposure, then processing efficiency improves, but the risk of substrate damage increases
Solution Approach 1:
The system replaces mechanical contact-based substrate handling with a non-contact deposition approach. The deposition head moves across the substrate without physical contact, eliminating mechanical stress and damage risks associated with traditional roll-to-roll handling while maintaining processing efficiency through controlled motion.
Solution Approach 2:
A field-based interaction (precursor gas delivery) serves as an intermediary between the deposition head and substrate, enabling the deposition process to occur without direct mechanical contact. This intermediary approach allows efficient processing while protecting the substrate from mechanical damage.
3Adaptability or versatility
If the deposition head is designed with a rounded output face to guide substrate along a curved path, then substrate size compatibility increases, but the device complexity increases
Solution Approach 1:
The deposition head incorporates a rounded output face that guides the substrate along a curved path during deposition. This curvature allows the system to accommodate substrates of various sizes by adjusting the radius of curvature, enhancing versatility while maintaining a relatively simple overall design through geometric optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces processing time, increases the substrate size compatibility, and minimizes the risk of damage, enabling more efficient and controlled ALD on larger substrates while maintaining precise layer thickness control.
Implementation Method 1
keeping the surface of the substrate contactless with the output face by means of a gas bearing provided using the one or more gas supplies
Implementation Method 2
having the precursor gas react near, e.g. on, a surface of the substrate so as to form an atomic layer
Data Source
AI summary
Method of performing atomic layer deposition. The method comprises supplying a precursor gas towards a substrate, using a deposition head including one or more gas supplies, including a precursor gas supply. The precursor gas reacts near a surface of the substrate for forming an atomic layer. The deposition head has an output face comprising the gas supplies, which at least partly faces the substrate surface during depositing the atomic layer. The output face has a substantially rounded shape defining a movement path of the substrate. The precursor-gas supply is moved relative to the substrate by rotating the deposition head while supplying the precursor gas, for depositing a stack of atomic layers while continuously moving in one direction. The surface of the substrate is kept contactless with the output face by means of a gas bearing.