Rounded Semiconductor Components for Electric Field Stress Relief
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Solution Overview
Problem
Semiconductor devices experience high electrical voltage differences between components, leading to electric field stress, aging, and potential device failure due to sharp edges and corners.
Innovation Solution
Incorporating rounded corners or edges on at least one of the electrically conductive carrier or the semiconductor chip, along with a dielectric material for galvanic isolation, to reduce high electric field peaks and promote uniform field distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If sharp edges and corners are present on device components, then manufacturing is simpler, but electric field stress increases causing device aging and failure
Solution Approach 1:
The patent applies curvature by rounding edges and corners of device components (such as the carrier and semiconductor chip) to eliminate sharp geometric features. This rounding process redistributes electric field lines uniformly across the component surfaces, preventing field concentration at sharp edges and corners, thereby reducing electric field stress and preventing electrical treeing while maintaining manufacturing feasibility through standard rounding processes.
2Reliability
If high electrical voltage differences occur between components, then device functionality is achieved, but electric field stress causes electrical aging and device failure
Solution Approach 1:
The patent employs edge and corner rounding on components subjected to high voltage differences to smooth out electric field distribution. By eliminating sharp geometric features that concentrate electric field lines, the rounding process reduces peak electric field stress in high-voltage regions, preventing electrical treeing and extending device operational safety while maintaining the necessary voltage differences for device functionality.
3Reliability
If rounded corners or edges are implemented, then electric field distribution becomes uniform reducing device aging, but manufacturing process becomes more complex
Solution Approach 1:
The patent implements edge and corner rounding as a practical geometric modification that can be integrated into existing manufacturing workflows. The rounding process, while adding a step to the manufacturing sequence, uses conventional techniques that do not fundamentally complicate the manufacturing system, making it a feasible trade-off for significantly improved device longevity and reliability.
Solution Approach 2:
The patent applies rounding selectively to specific locations where electric field concentration is most problematic (edges and corners of components in high-stress regions), rather than requiring complete redesign of entire components. This localized application of curvature minimizes the impact on manufacturing complexity while achieving the primary goal of uniform electric field distribution and extended device life.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of rounded features and dielectric isolation effectively mitigates electrical treeing and device degradation, enhancing the durability and reliability of semiconductor devices.
Implementation Method 1
a dielectric material arranged between the first portion of the carrier and the semiconductor chip, wherein the dielectric material galvanically isolates the first portion of the carrier and the semiconductor chip
Implementation Method 2
At least one of the first portion of the carrier or the semiconductor chip includes at least one of a rounded corner or a rounded edge... promote uniform field distribution
Data Source
AI summary
A semiconductor device includes an electrically conductive carrier and a semiconductor chip arranged over a first portion of the carrier. The semiconductor device further includes a dielectric material arranged between the first portion of the carrier and the semiconductor chip, wherein the dielectric material galvanically isolates the first portion of the carrier and the semiconductor chip. At least one of the first portion of the carrier or the semiconductor chip includes at least one of a rounded corner or a rounded edge.